基于多模干涉耦合器的波分复用传输的硅基模式转换器和解复用器

Yong Zhou, Junqiang Sun
{"title":"基于多模干涉耦合器的波分复用传输的硅基模式转换器和解复用器","authors":"Yong Zhou, Junqiang Sun","doi":"10.4236/opj.2020.106012","DOIUrl":null,"url":null,"abstract":"We present a mode converter and demultiplexer structure for wavelength division multiplexing (WDM) transmission by employing multimode interference (MMI) on Silicon-on-Insulator (SOI) platform. The mode converter and demultiplexer have a compact size of less than 2.7 μm × 43.7 μm. Moreover, the crosstalk between neighboring wavelength channel within C band (1530 nm to 1570 nm) can be reduced by utilizing the tapered phase shifter cascaded with MMI. The simulated results indicate that this structure has a low insertion loss of less than 1 dB, a low crosstalk of better than ?15 dB and a relatively high fabrication tolerance of ~10 nm. Such structure may find many potential applications in silicon photonic integrated devices.","PeriodicalId":64491,"journal":{"name":"光学与光子学期刊(英文)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Silicon-Based Mode Converter and Demultiplexer for Wavelength Division Multiplexing Transmission by Using Multimode Interference Couplers\",\"authors\":\"Yong Zhou, Junqiang Sun\",\"doi\":\"10.4236/opj.2020.106012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a mode converter and demultiplexer structure for wavelength division multiplexing (WDM) transmission by employing multimode interference (MMI) on Silicon-on-Insulator (SOI) platform. The mode converter and demultiplexer have a compact size of less than 2.7 μm × 43.7 μm. Moreover, the crosstalk between neighboring wavelength channel within C band (1530 nm to 1570 nm) can be reduced by utilizing the tapered phase shifter cascaded with MMI. The simulated results indicate that this structure has a low insertion loss of less than 1 dB, a low crosstalk of better than ?15 dB and a relatively high fabrication tolerance of ~10 nm. Such structure may find many potential applications in silicon photonic integrated devices.\",\"PeriodicalId\":64491,\"journal\":{\"name\":\"光学与光子学期刊(英文)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"光学与光子学期刊(英文)\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.4236/opj.2020.106012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"光学与光子学期刊(英文)","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.4236/opj.2020.106012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

在绝缘体上硅(SOI)平台上采用多模干扰(MMI)技术,提出了一种用于波分复用(WDM)传输的模式转换器和解复用器结构。模式转换器和解复用器的尺寸小于2.7 μm × 43.7 μm。此外,在C波段(1530 nm ~ 1570 nm)相邻波长通道之间的串扰可以通过使用与MMI级联的锥形移相器来减小。仿真结果表明,该结构的插入损耗小于1 dB,串扰小于- 15 dB,制造公差为~10 nm。这种结构在硅光子集成器件中有许多潜在的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon-Based Mode Converter and Demultiplexer for Wavelength Division Multiplexing Transmission by Using Multimode Interference Couplers
We present a mode converter and demultiplexer structure for wavelength division multiplexing (WDM) transmission by employing multimode interference (MMI) on Silicon-on-Insulator (SOI) platform. The mode converter and demultiplexer have a compact size of less than 2.7 μm × 43.7 μm. Moreover, the crosstalk between neighboring wavelength channel within C band (1530 nm to 1570 nm) can be reduced by utilizing the tapered phase shifter cascaded with MMI. The simulated results indicate that this structure has a low insertion loss of less than 1 dB, a low crosstalk of better than ?15 dB and a relatively high fabrication tolerance of ~10 nm. Such structure may find many potential applications in silicon photonic integrated devices.
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