测量硬度,杨氏模量,并从冶金级硅太阳级硅断裂韧性

Denir Paganini Nascimento, M. Martorano, Caio Cesar Cebalos de Almeida, A. F. Padilha
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引用次数: 0

摘要

测定了冶金级硅定向凝固制备的大块太阳级硅(SoG-Si)的杨氏模量和韧性(kic)。杨氏模量采用振动脉冲激励法测定,K - IC采用压痕法测定。测量值与文献中的测量值一致。压痕法是测量SoG-Si中K - IC的一种可靠、简单、廉价、快速的实验方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Measurements of hardness, young s modulus, and fracture toughness of solar grade silicon obtained from metallurgical grade silicon
Young modulus and toughness (K IC ) of bulk solar grade silicon (SoG-Si) obtained by directional solidification of metallurgical grade silicon were determined. The Young modulus was measured by the technique of impulse excitation of vibration and K IC was determined using the indentation method. Measurement values agree well with those available in the literature. The indentation method proved to be a reliable, relatively simple, inexpensive, and fast experimental method to measure K IC in SoG-Si.
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