{"title":"电子束加热硅晶体生长体系中杂质源的减少","authors":"A. Kravtsov, J. Virbulis, A. Krauze","doi":"10.3952/physics.v61i3.4518","DOIUrl":null,"url":null,"abstract":"A new series of experiments was conducted to determine the source of impurities in the process of silicon crystal growth with electron beam heating. A gas-dynamic window was placed between the electron gun and growth chamber. Also positively-charged traps were placed along the crucible to reduce the number of electrons hitting the chamber and the crucible. Five experiments were conducted: two with the window, two with charge traps, and one with both the window and charge traps. The analysis of obtained samples showed that the gas-dynamic window decreases the content of Al, Cu, Fe, Cr and O2, and the trap, used in the experiments, decreases the content of Fe, Cr and Cu in residues of the melt. The content of all impurities, except Al, is close to the goal level. Al impurities come only from the gun, but the gas-dynamic window cannot eliminate them completely. It seems that Al impurities come either as neutral atoms carried by the gas or as positively charged ions. To reduce these impurities, a separation of the Al flow from the beam by the magnetic field is proposed.","PeriodicalId":18144,"journal":{"name":"Lithuanian Journal of Physics","volume":null,"pages":null},"PeriodicalIF":0.3000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reduction of impurity sources in Si crystal growth system with electron gun beam heating\",\"authors\":\"A. Kravtsov, J. Virbulis, A. Krauze\",\"doi\":\"10.3952/physics.v61i3.4518\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new series of experiments was conducted to determine the source of impurities in the process of silicon crystal growth with electron beam heating. A gas-dynamic window was placed between the electron gun and growth chamber. Also positively-charged traps were placed along the crucible to reduce the number of electrons hitting the chamber and the crucible. Five experiments were conducted: two with the window, two with charge traps, and one with both the window and charge traps. The analysis of obtained samples showed that the gas-dynamic window decreases the content of Al, Cu, Fe, Cr and O2, and the trap, used in the experiments, decreases the content of Fe, Cr and Cu in residues of the melt. The content of all impurities, except Al, is close to the goal level. Al impurities come only from the gun, but the gas-dynamic window cannot eliminate them completely. It seems that Al impurities come either as neutral atoms carried by the gas or as positively charged ions. To reduce these impurities, a separation of the Al flow from the beam by the magnetic field is proposed.\",\"PeriodicalId\":18144,\"journal\":{\"name\":\"Lithuanian Journal of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.3000,\"publicationDate\":\"2021-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Lithuanian Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.3952/physics.v61i3.4518\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Lithuanian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.3952/physics.v61i3.4518","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Reduction of impurity sources in Si crystal growth system with electron gun beam heating
A new series of experiments was conducted to determine the source of impurities in the process of silicon crystal growth with electron beam heating. A gas-dynamic window was placed between the electron gun and growth chamber. Also positively-charged traps were placed along the crucible to reduce the number of electrons hitting the chamber and the crucible. Five experiments were conducted: two with the window, two with charge traps, and one with both the window and charge traps. The analysis of obtained samples showed that the gas-dynamic window decreases the content of Al, Cu, Fe, Cr and O2, and the trap, used in the experiments, decreases the content of Fe, Cr and Cu in residues of the melt. The content of all impurities, except Al, is close to the goal level. Al impurities come only from the gun, but the gas-dynamic window cannot eliminate them completely. It seems that Al impurities come either as neutral atoms carried by the gas or as positively charged ions. To reduce these impurities, a separation of the Al flow from the beam by the magnetic field is proposed.
期刊介绍:
The main aim of the Lithuanian Journal of Physics is to reflect the most recent advances in various fields of theoretical, experimental, and applied physics, including: mathematical and computational physics; subatomic physics; atoms and molecules; chemical physics; electrodynamics and wave processes; nonlinear and coherent optics; spectroscopy.