{"title":"Bi12SiO20晶体光吸收的热激活光谱","authors":"T. Panchenko, L. Karpova","doi":"10.3116/16091833/21/2/84/2020","DOIUrl":null,"url":null,"abstract":"We suggest applying a method of thermally activated spectroscopy to the problem of impurity optical absorption. The method consists in measuring the temperature dependence of optical absorption in a wide-gap semiconductor crystal and analyzing the temperature derivative of this dependence. The above technique allows for determining the energies of thermal and optical activations and the strength of electron–phonon interaction for the impurity centres.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Thermally activated spectroscopy of optical absorption in Bi12SiO20 crystals\",\"authors\":\"T. Panchenko, L. Karpova\",\"doi\":\"10.3116/16091833/21/2/84/2020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We suggest applying a method of thermally activated spectroscopy to the problem of impurity optical absorption. The method consists in measuring the temperature dependence of optical absorption in a wide-gap semiconductor crystal and analyzing the temperature derivative of this dependence. The above technique allows for determining the energies of thermal and optical activations and the strength of electron–phonon interaction for the impurity centres.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.3116/16091833/21/2/84/2020\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.3116/16091833/21/2/84/2020","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Thermally activated spectroscopy of optical absorption in Bi12SiO20 crystals
We suggest applying a method of thermally activated spectroscopy to the problem of impurity optical absorption. The method consists in measuring the temperature dependence of optical absorption in a wide-gap semiconductor crystal and analyzing the temperature derivative of this dependence. The above technique allows for determining the energies of thermal and optical activations and the strength of electron–phonon interaction for the impurity centres.
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