SiC表面SiO2氧化膜的高温稳定性

Q4 Engineering
S. Yamaguchi, A. Yusufu, Takuma Shirahama, Y. Murakami, T. Onitsuka, Masayoshi Uno
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引用次数: 1

摘要

SiC是一种很有前景的耐事故燃料包层,它是非氧化物,在900℃以上的大气条件下,会发生被动氧化,形成一层保护性的氧化膜。在这种高温下发生的反应对于评估严重事故中碳化硅的可靠性是重要的,但对它的理解仍然不足。在这项研究中,为了评估在涉及轻水反应堆的事故中SiC包层暴露于大气(10.5 Pa)时的高温氧化行为,在1100至1500℃下进行了长达100小时的氧化试验。结果表明,在SiC表面形成了sio2氧化膜,但证实了杂质和裂纹的形成是由相变引起的。此外,在1500℃下,本研究首次观察到多层sio2氧化物膜的形成。因此,在高温和常压条件下,SiC的氧化反应不会因周围环境的变化而停止。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Temperature Stability of SiO2 Oxide Film on Surface of SiC
SiC, which is a promising accident-tolerant fuel cladding, is a non-oxide, and it is known that pas-sive oxidation occurs, where by a protective oxide fi lm of SiO 2 is formed under atmospheric conditions above 900 ℃ . The reaction occurring at this high temperature is important in assessing the soundness of SiC during a severe accident, but the understanding of it is still insuf fi cient. In this study, to evalu-ate the high-temperature oxidation behavior when SiC cladding is exposed to the atmosphere ( 10 5 Pa ) during an accident involving a light-water reactor, an oxidation test was performed for up to 100 h at 1100 to 1500 ℃ . As a result, a SiO 2 oxide fi lm was formed on the surface of SiC, but the formation of bubbles originating from impurities and cracks due to a phase transformation was con fi rmed. In addi-tion, it was observed, for the fi rst time in this research, that a multilayered SiO 2 oxide fi lm was formed at 1500 ℃ . Therefore, it was shown that the oxidation reaction of SiC does not stop depending on the surrounding conditions under high temperature and atmospheric conditions.
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来源期刊
Transactions of the Atomic Energy Society of Japan
Transactions of the Atomic Energy Society of Japan Energy-Nuclear Energy and Engineering
CiteScore
0.50
自引率
0.00%
发文量
16
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