Yunbo Zhou (周云波) , Yu Yang (杨 煜) , Yueer Shan (单悦尔) , Huafeng Cao (曹华锋) , Bing Yang (杨 兵) , Zongguang Yu (于宗光)
{"title":"便携式数字辐射探测器的超低功耗CMOS前端读出专用集成电路","authors":"Yunbo Zhou (周云波) , Yu Yang (杨 煜) , Yueer Shan (单悦尔) , Huafeng Cao (曹华锋) , Bing Yang (杨 兵) , Zongguang Yu (于宗光)","doi":"10.1016/S1007-0214(11)70024-4","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this front-end readout ASIC in the weak inversion region, the ultra-low </span>power dissipation is only 0.1 mW/channel (3.0 V). Simulations and test results suggest that this design gives </span>lower power consumption<span> than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.</span></p></div>","PeriodicalId":60306,"journal":{"name":"Tsinghua Science and Technology","volume":null,"pages":null},"PeriodicalIF":5.2000,"publicationDate":"2011-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1007-0214(11)70024-4","citationCount":"3","resultStr":"{\"title\":\"Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector\",\"authors\":\"Yunbo Zhou (周云波) , Yu Yang (杨 煜) , Yueer Shan (单悦尔) , Huafeng Cao (曹华锋) , Bing Yang (杨 兵) , Zongguang Yu (于宗光)\",\"doi\":\"10.1016/S1007-0214(11)70024-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p><span><span>An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this front-end readout ASIC in the weak inversion region, the ultra-low </span>power dissipation is only 0.1 mW/channel (3.0 V). Simulations and test results suggest that this design gives </span>lower power consumption<span> than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.</span></p></div>\",\"PeriodicalId\":60306,\"journal\":{\"name\":\"Tsinghua Science and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.2000,\"publicationDate\":\"2011-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S1007-0214(11)70024-4\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Tsinghua Science and Technology\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1007021411700244\",\"RegionNum\":1,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"COMPUTER SCIENCE, INFORMATION SYSTEMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tsinghua Science and Technology","FirstCategoryId":"1093","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1007021411700244","RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"COMPUTER SCIENCE, INFORMATION SYSTEMS","Score":null,"Total":0}
Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector
An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this front-end readout ASIC in the weak inversion region, the ultra-low power dissipation is only 0.1 mW/channel (3.0 V). Simulations and test results suggest that this design gives lower power consumption than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.