{"title":"高内阻可再生能源的体偏控制","authors":"Keita Azegami;Hayate Okuhara;Hideharu Amano","doi":"10.1109/TMSCS.2018.2827980","DOIUrl":null,"url":null,"abstract":"Sensor nodes used in Internet of Things (IoT) are required to work an extremely long time without replacing the battery. Natural renewable energy such as a solar battery is a hopeful candidate for such nodes. Here, a power model for operating an Silicon on Insulator (SOI) device with a solar battery including a large inner resistance is proposed, and applied to a micro-controller V850E-star and an accelerator CMA-SOTB2. Unlike the ideal case, the maximum operational frequency was achieved with reverse biasing by suppressing the leakage current which decreases the supply voltage. Under the room light with a large inner resistance, the strong reverse bias is effective, while a relatively weak reverse bias is advantageous under the bright light. The proposed model is appeared to be useful to estimate the appropriate body bias voltage both for V850E-star and CMA-SOTB2. In the V850E-star, the estimated operational frequencies were different from the real chip, while they were relatively matched when CMA-SOTB2 was used under the low illuminance.","PeriodicalId":100643,"journal":{"name":"IEEE Transactions on Multi-Scale Computing Systems","volume":"4 4","pages":"605-612"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TMSCS.2018.2827980","citationCount":"1","resultStr":"{\"title\":\"Body Bias Control for Renewable Energy Source with a High Inner Resistance\",\"authors\":\"Keita Azegami;Hayate Okuhara;Hideharu Amano\",\"doi\":\"10.1109/TMSCS.2018.2827980\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sensor nodes used in Internet of Things (IoT) are required to work an extremely long time without replacing the battery. Natural renewable energy such as a solar battery is a hopeful candidate for such nodes. Here, a power model for operating an Silicon on Insulator (SOI) device with a solar battery including a large inner resistance is proposed, and applied to a micro-controller V850E-star and an accelerator CMA-SOTB2. Unlike the ideal case, the maximum operational frequency was achieved with reverse biasing by suppressing the leakage current which decreases the supply voltage. Under the room light with a large inner resistance, the strong reverse bias is effective, while a relatively weak reverse bias is advantageous under the bright light. The proposed model is appeared to be useful to estimate the appropriate body bias voltage both for V850E-star and CMA-SOTB2. In the V850E-star, the estimated operational frequencies were different from the real chip, while they were relatively matched when CMA-SOTB2 was used under the low illuminance.\",\"PeriodicalId\":100643,\"journal\":{\"name\":\"IEEE Transactions on Multi-Scale Computing Systems\",\"volume\":\"4 4\",\"pages\":\"605-612\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1109/TMSCS.2018.2827980\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Multi-Scale Computing Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/8340114/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Multi-Scale Computing Systems","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/8340114/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Body Bias Control for Renewable Energy Source with a High Inner Resistance
Sensor nodes used in Internet of Things (IoT) are required to work an extremely long time without replacing the battery. Natural renewable energy such as a solar battery is a hopeful candidate for such nodes. Here, a power model for operating an Silicon on Insulator (SOI) device with a solar battery including a large inner resistance is proposed, and applied to a micro-controller V850E-star and an accelerator CMA-SOTB2. Unlike the ideal case, the maximum operational frequency was achieved with reverse biasing by suppressing the leakage current which decreases the supply voltage. Under the room light with a large inner resistance, the strong reverse bias is effective, while a relatively weak reverse bias is advantageous under the bright light. The proposed model is appeared to be useful to estimate the appropriate body bias voltage both for V850E-star and CMA-SOTB2. In the V850E-star, the estimated operational frequencies were different from the real chip, while they were relatively matched when CMA-SOTB2 was used under the low illuminance.