一种用于纳米横杆阵列缺陷和容差逻辑映射的快速爬山算法

Furkan Peker;Mustafa Altun
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引用次数: 6

摘要

纳米交叉阵列是面积和功率高效的结构,通常通过基于自组装的自下而上的制造方法实现,而不是相对昂贵的传统自上而下的光刻技术。这种优势伴随着一个代价:非常高的工艺变化。在这项工作中,我们专注于存在高工艺变化的最坏情况下的延迟优化问题。作为一种容忍变化的逻辑映射方案,提出了一种快速爬山算法;与文献中的方法相比,它以更小的运行时间提供了类似或更好的延迟改进。我们的算法首先对交叉开关执行减少操作,其动机是问题不一定需要整个交叉开关。这显著降低了基准函数高达72%的计算负载。接下来,应用初始列映射。在可以被视为准备的前两个步骤之后,该算法进行到具有列重新排序的爬山行搜索的最后一个步骤,其中执行变异容限的优化。作为这项工作的扩展,我们直接将我们的爬山算法应用于缺陷阵列,以执行缺陷和变化容限。同样,仿真结果证实了我们算法的速度,与文献中的相关算法相比,在不牺牲缺陷和变异容忍性能的情况下,速度高出600倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Fast Hill Climbing Algorithm for Defect and Variation Tolerant Logic Mapping of Nano-Crossbar Arrays
Nano-crossbar arrays are area and power efficient structures, generally realized with self-assembly based bottom-up fabrication methods as opposed to relatively costly traditional top-down lithography techniques. This advantage comes with a price: very high process variations. In this work, we focus on the worst-case delay optimization problem in the presence of high process variations. As a variation tolerant logic mapping scheme, a fast hill climbing algorithm is proposed; it offers similar or better delay improvements with much smaller runtimes compared to the methods in the literature. Our algorithm first performs a reducing operation for the crossbar motivated by the fact that the whole crossbar is not necessarily needed for the problem. This significantly decreases the computational load up to 72 percent for benchmark functions. Next, initial column mapping is applied. After the first two steps that can be considered as preparatory, the algorithm proceeds to the last step of hill climbing row search with column reordering where optimization for variation tolerance is performed. As an extension to this work, we directly apply our hill climbing algorithm on defective arrays to perform both defect and variation tolerance. Again, simulation results approve the speed of our algorithm, up to 600 times higher compared to the related algorithms in the literature without sacrificing defect and variation tolerance performance.
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