形状对Ni-Fe/Ti/Co-Zr-Mo三层MR元件偏压场的影响

H. Nagai;S. Tanoue;T. Yamazaki
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引用次数: 4

摘要

讨论了形状对Ni-Fe/Ti/Co-Zr-Mo三层MR元件偏置场的影响,并讨论了控制磁头偏置场的目的。在单层Ni-Fe膜的情况下,发现在最大MR系数的一半处的场与厚度和高度的倒数成比例。在三层MR元件的情况下,饱和偏置场与Co-Zr-Mo厚度成比例。偏置场在较小的感测电流下饱和,并且饱和偏置场随着Ti厚度的减小而增大。在三层MR元件中使用Co-Zr-Mo表面氧化层代替Ti层是有效的,因为可以将元件制造为均匀的薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Shape on the Bias Field of an Ni-Fe/Ti/Co-Zr-Mo Trilayer MR Element
The effect of shape on the bias field of an Ni-Fe/Ti/Co-Zr-Mo trilayer MR element is discussed in relation to the aim of controlling the bias field of MR heads. In the case of a single-layer Ni-Fe film, the field at half-maximum MR coefficient was found to be proportional to the thickness and the reciprocal of the height. In the case of a trilayer MR element, the saturation bias field was proportional to the Co-Zr-Mo thickness. The bias field was saturated at smaller sense currents, and the saturation bias field increased as the Ti thickness was decreased. The use of a Co-Zr-Mo surface oxidation layer instead of a Ti layer in the trilayer MR element was effective, because it was possible to fabricate the element as a uniform thin film.
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