Al或Ga取代Bi3Fe5O12石榴石薄膜的合成

IEEE Translation Journal on Magnetics in Japan Pub Date : 1994-09-01 DOI:10.1109/TJMJ.1994.4565941

S. Nishida;T. Okuda;H. Ohsato;Y. Kato;T. Suzuki

{"title":"Al或Ga取代Bi3Fe5O12石榴石薄膜的合成","authors":"S. Nishida;T. Okuda;H. Ohsato;Y. Kato;T. Suzuki","doi":"10.1109/TJMJ.1994.4565941","DOIUrl":null,"url":null,"abstract":"Using an alternating ion-beam-sputtering technique, Al\n3+\n and Ga\n3+\n ions were successfully substituted for Fe\n3+\n ions in Bi\n<inf>3</inf>\nFe\n<inf>5</inf>\nO\n<inf>12</inf>\n (BIG) film. The effects of substitution were confirmed by measurements of the lattice constant, ferromagnetic resonance field and magnetic moment. The lattice constant and saturation magnetization of BIG film can be adjusted by Al or Ga substitution, which is analogous to Al- or Ga-substituted YIG. The magnetic anisotropy of a BIG film can be changed from the easy-plane type to the perpendicular uniaxial type by Al or Ga substitution. The uniaxial anisotropy is mainly attributed to the stress-induced anisotropy.","PeriodicalId":100647,"journal":{"name":"IEEE Translation Journal on Magnetics in Japan","volume":"9 5","pages":"163-168"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TJMJ.1994.4565941","citationCount":"0","resultStr":"{\"title\":\"Synthesis of Al- or Ga-Substituted Bi3Fe5O12 Garnet Films\",\"authors\":\"S. Nishida;T. Okuda;H. Ohsato;Y. Kato;T. Suzuki\",\"doi\":\"10.1109/TJMJ.1994.4565941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using an alternating ion-beam-sputtering technique, Al\\n3+\\n and Ga\\n3+\\n ions were successfully substituted for Fe\\n3+\\n ions in Bi\\n<inf>3</inf>\\nFe\\n<inf>5</inf>\\nO\\n<inf>12</inf>\\n (BIG) film. The effects of substitution were confirmed by measurements of the lattice constant, ferromagnetic resonance field and magnetic moment. The lattice constant and saturation magnetization of BIG film can be adjusted by Al or Ga substitution, which is analogous to Al- or Ga-substituted YIG. The magnetic anisotropy of a BIG film can be changed from the easy-plane type to the perpendicular uniaxial type by Al or Ga substitution. The uniaxial anisotropy is mainly attributed to the stress-induced anisotropy.\",\"PeriodicalId\":100647,\"journal\":{\"name\":\"IEEE Translation Journal on Magnetics in Japan\",\"volume\":\"9 5\",\"pages\":\"163-168\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1109/TJMJ.1994.4565941\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Translation Journal on Magnetics in Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/4565941/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Translation Journal on Magnetics in Japan","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/4565941/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用交替离子束溅射技术，成功地用Al3+和Ga3+离子取代了Bi3Fe5O12（BIG）薄膜中的Fe3+离子。通过晶格常数、铁磁共振场和磁矩的测量，证实了取代的影响。BIG薄膜的晶格常数和饱和磁化强度可以通过Al或Ga取代来调节，这类似于Al或Ga-取代的YIG。BIG薄膜的磁各向异性可以通过Al或Ga取代从易平面型变为垂直单轴型。单轴各向异性主要归因于应力诱导的各向异性。

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Synthesis of Al- or Ga-Substituted Bi3Fe5O12 Garnet Films

Using an alternating ion-beam-sputtering technique, Al ³⁺ and Ga ³⁺ ions were successfully substituted for Fe ³⁺ ions in Bi 3 Fe 5 O 12 (BIG) film. The effects of substitution were confirmed by measurements of the lattice constant, ferromagnetic resonance field and magnetic moment. The lattice constant and saturation magnetization of BIG film can be adjusted by Al or Ga substitution, which is analogous to Al- or Ga-substituted YIG. The magnetic anisotropy of a BIG film can be changed from the easy-plane type to the perpendicular uniaxial type by Al or Ga substitution. The uniaxial anisotropy is mainly attributed to the stress-induced anisotropy.

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IEEE Translation Journal on Magnetics in Japan

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