使用非晶微导线的磁阻抗元件

IEEE Translation Journal on Magnetics in Japan Pub Date : 1994-11-01 DOI:10.1109/TJMJ.1994.4565950

K. Bushida;M. Noda;L.V. Panina;H. Yoshida;T. Uchiyama;K. Mohri

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引用次数: 21

摘要

在通过高频电流时，在非晶磁性导线中发现了大的磁阻抗（MI）效应。当平行于导线轴线施加约10Oe（约800A/m）的外部磁场时，导线端部之间的感应电压的幅度变化40%至50%。本文报道了组成为（Fe0.06Co0.94）72.5Si12.5B15和磁致伸缩-10-7的极小非晶线中MI效应的原理和基本性质，并描述了在使用直径为30μm、长度为1mm的极小MI元件的旋转编码器头中的应用。

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Magneto-Impedance Element Using Amorphous Micro Wire

A large magneto-impedance (MI) effect was found in amorphous magnetic wires while passing a high-frequency current. The amplitude of the induced voltage between the ends of a wire changes by 40 to 50% when an external magnetic field of about 10 Oe (approximately 800 A/m) is applied parallel to the wire axis. This paper reports the principles and basic properties of the MI effect in very small amorphous wires of composition (Fe _0.06 Co _0.94 ) _72.5 Si _12.5 B ₁₅ and magnetostriction -10 ^-7 , and describes an application to rotary encoder heads using very small MI elements 30 μm in diameter and 1 mm in length.

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IEEE Translation Journal on Magnetics in Japan

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