石墨烯薄膜的化学气相沉积(CVD)生长

O. Frank, M. Kalbáč
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引用次数: 13

摘要

摘要:综述了化学气相沉积(CVD)在镍和铜基底上制备石墨烯的挑战和最新进展。详细讨论了大面积单层畴的形成、单晶的生长和有序多层的可控形成。介绍了同位素标记作为一种工具,以执行CVD石墨烯的先进研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Chemical vapor deposition (CVD) growth of graphene films
Abstract: The challenges and recent achievements in the chemical vapor deposition (CVD) production of graphene on nickel and copper substrates are reviewed. The formation of large-area monolayer domains, growth on single crystals and controlled formation of ordered multilayers are discussed in detail. Isotopic labeling is introduced as a tool to perform advanced studies on CVD graphene.
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