双层石墨烯中的电子输运

R. Asgari
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引用次数: 0

摘要

摘要:本章研究了双层石墨烯中的电子输运,并描述了基本的物理和概念问题。描述了一个模型哈密顿系统,并给出了在该系统中产生能带隙的方法。研究的输运性质包括p-n结的电导,自一致Born近似和RKKY (Ruderman-Kittel-Kasuya-Yosida)相互作用。本文描述了悬浮双层石墨烯和新一代双层石墨烯在SiC上的研究,并探讨了多体效应在这些体系中的作用。讨论了对称和非对称电荷密度通道中的集体模式,并探讨了准粒子理论中有效质量作为基本量的使用。对双层石墨烯中的电荷可压缩性进行了深入研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic transport in bilayer graphene
Abstract: Electronic transport in bilayer graphene is studied in this chapter and the fundamental physics and conceptual issues are described. A model Hamiltonian system is described and the method for inducing an energy band gap in the system. The transport properties investigated include conductance in a p–n junction, the self-consistent Born approximation and RKKY (Ruderman–Kittel–Kasuya–Yosida) interactions in biased bilayer graphene. Studies on suspended bilayer graphene and on new-generation bilayer graphene samples on SiC are described and the role of many-body effects in these systems is explored. The collective modes in the symmetry and asymmetry charge density channels are discussed and use of the effective mass as an essential quantity in quasiparticle theories is examined. The charge compressibility in bilayer graphene is studied in depth.
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