脉冲激光沉积法合成氮化镓薄膜作为氨(nh3)气体传感器

IF 0.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Z. E. Slaiby, A. Ramizy
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引用次数: 5

摘要

在氮气气氛中,采用脉冲激光沉积技术在硅衬底(Si)上沉积GaN薄膜,作为检测氨(NH3)气体的气体传感器。利用原子力显微镜(AFM)对氮化镓纳米薄膜的表面形貌进行了表征。薄膜呈均匀状,分布和晶粒形状接近均匀。在场发射扫描电镜(FESEM)图像中显示了高密度的纳米结构氮化镓。XRD测试表明,GaN具有六边形结构。利用能量色散X射线分析(EDX)鉴定了材料的元素组成。EDX分析表明,样品中氮的平均浓度随激光脉冲数的增加而增加。采用紫外-可见光谱法进行了带隙测量。用自制的气体传感器装置测量了NH3气体的气敏度与浓度的关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SYNTHESIS GALLIUM NITRIDE THIN FILMS BY PULSED LASER DEPOSITION AS AMMONIA (NH3) GAS SENSOR
GaN thin films were deposited on silicon substrate (Si) by pulse laser deposition in a nitrogen atmosphere to use as a gas sensor for detection Ammonia (NH3) gas. Surface morphology of gallium nitride nano thin films were characterized by atomic force microscopy (AFM). The film appears homogenous and the distribution and grain shapes is nearly uniform. High density of nanostructure GaN was created as shown in field emission scan electron microscopy (FESEM) image. XRD measurement showed that GaN have a hexagonal structure. The elemental composition of materials was identified by use of Energy Dispersive X- Ray Analysis (EDX). The average concentration of nitrogen according to EDX analysis for the samples are increase with increasing number of laser pulses. Optical measurements were performed to measure the band gap by UV-visible spectroscopy. The gas sensitivity for NH3 gas were measured for fabricated gas sensor device as a function of concentration.
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来源期刊
Journal of Optoelectronic and Biomedical Materials
Journal of Optoelectronic and Biomedical Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
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