ZnO、InZnO、GaZnO和InGaZnO物理性质和光带隙的比较研究

IF 0.3 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

International Journal of Nanotechnology Pub Date : 2022-01-01 DOI:10.1504/ijnt.2022.124505

N. Kasim, Z. Hassan, W. F. Lim, Hock Jin, Quah

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引用次数: 1

摘要

-详细比较了自旋镀膜法制备的ZnO、InZnO、GaZnO和InGaZnO (IGZO)薄膜，找出in和Ga对物理性能变化的贡献。从FESEM上看，ZnO在薄膜上呈现出不均匀的晶粒分布。In的加入使晶粒更加分散，尺寸不一致。另一方面，镓将晶粒转变成六角形，表面也被更多的晶粒所包裹。AFM分析显示了不同的地形和表面粗糙度值，以补充FESEM结果。此外，本文还对ZnO、InZnO、GaZnO和InGaZnO薄膜的光学带隙进行了计算和讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A comparison study of ZnO, InZnO, GaZnO and InGaZnO physical properties and optical bandgap

- Comparison between ZnO, InZnO, GaZnO and InGaZnO (IGZO) thin films prepared using spin coating method were studied in detail to find out contribution of In and Ga towards changes in the physical properties. From FESEM, ZnO has revealed an uneven and non-uniform distribution of grains on the film. The addition of In has caused the grains to be more separated and inconsistent in sizes. Ga, on the other hand has transformed the grain to be more hexagonal in shapes and the surface was more packed with grains. AFM analysis has shown dissimilar topographies and surface roughness values to compliment FESEM results. Additionally, optical band gap of ZnO, InZnO, GaZnO and InGaZnO thin films were also calculated and discussed in this study.

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来源期刊

International Journal of Nanotechnology 工程技术-材料科学：综合

CiteScore

0.60

自引率

20.00%

发文量

审稿时长

6-12 weeks

期刊介绍： IJNT offers a multidisciplinary source of information in all subjects and topics related to Nanotechnology, with fundamental, technological, as well as societal and educational perspectives. Special issues are regularly devoted to research and development of nanotechnology in individual countries and on specific topics.