衬底温度对SiCO薄膜力学性能的影响

Q4 Engineering

International Journal of Materials and Structural Integrity Pub Date : 2015-08-13 DOI:10.1504/ijmsi.2015.071115

Miao Zhang, N. Liao, Jie Shen, W. Xue

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引用次数: 0

摘要

本研究采用非平衡磁控溅射法制备了薄膜形式的氧化碳化硅(SiCO)陶瓷。采用反应性射频溅射法制备了SiC靶材和氧气。采用纳米压痕和划痕试验研究了SiCO薄膜在不同衬底温度下的力学性能。通过分析杨氏模量、表面粗糙度和粘接强度，提出了最佳温度。

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Effect of substrate temperature on mechanical properties of SiCO thin film

In this study, unbalanced magnetron sputtering approach was used to prepare silicon oxycarbide (SiCO) ceramics in the form of thin film. The SiCO thin films were synthesised by reactive radio-frequency sputtering with a SiC target and oxygen gas. Nano-indentation and scratch test were used to study the mechanical properties of SiCO film at different substrate temperatures. An optimal temperature was proposed by analysing Young's modulus, surface roughness and adhesion strength.

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来源期刊

International Journal of Materials and Structural Integrity Engineering-Mechanical Engineering

CiteScore

0.40

自引率

0.00%

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