热辅助垂直MRAM应用Co/Pd多层材料磁性能的结构控制

Q4 Engineering
B. Purnama, Y. Nozaki, K. Matsuyama
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引用次数: 1

摘要

本文通过特殊霍尔效应测量系统地研究了不同Co厚度tCo和双层数N的[Co/Pd]N光刻图像化样品中磁性能的温度依赖性。垂直矫顽力场Hc随着tCo的增加而减小,但厚度只有1 a。Hc的阈值温度(Tth)随tCo的增加而线性消失。随着N的增加,Hc和th单调增加,范围为5 ~ 50。XRD谱图中Co/Pd(111)峰高的增强证实了N较大的样品具有优越的晶体结构。根据Hc的扫描速率依赖性,计算了实际热活化系数α为174。在220℃下对[Co(1.7 A)Pd(8 A)]30进行空气退火,可以显著提高热辅助MRAM的应用效果,即Hc从1.3 kOe增加到2.9 kOe,而th从210℃降低到190℃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural control of magnetic properties in Co/Pd multilayer for heat assisted perpendicular MRAM application
Temperature dependence of magnetic properties in [Co/Pd]N multilayer have been systematically studied for lithographically patterned samples with different Co thicknesses tCo and the bi-layer number N by extraordinary Hall effect measurements. The perpendicular coercive field Hc decreases with the increase of tCo, excepting a very thin thickness of 1 A. While a threshold temperature (Tth) of Hc vanishing linearly increases with the increase of tCo. The Hc and Tth monotonously increases with the increase of N, ranged from 5 to 50. The superior crystalline structure for samples with the larger N was confirmed from enhanced Co/Pd(111) peak height in the XRD pattern. A practical thermal activation coefficient α of 174 was evaluated from a sweep rate dependence of Hc. A marked improvements for the heat assisted MRAM application was attained by air annealing of [Co(1.7 A)Pd(8 A )]30 at 220 °C, that is, the Hc was increased from 1.3 kOe to 2.9 kOe, while Tth reduced from 210 °C to 190 °C.
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来源期刊
CiteScore
0.20
自引率
0.00%
发文量
3
期刊介绍: Research Reports on Information Science and Electrical Engineering of Kyushu University provides quick publication in English or in Japanese on the most recent findings and achievements in the Faculty of Information Science and Electrical Engineering, Kyushu University.
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