铣削对Ba(Fe1/2Ta1/2)O3陶瓷电性能的影响

IF 1.9 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advances in Materials Research-An International Journal Pub Date : 2016-09-25 DOI:10.12989/AMR.2016.5.3.181

K. Prasad, Uttam K. Mahto, Sumit Roy, S. Chaudhuri

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引用次数: 8

摘要

本文研究了高能铣削对标准固相法合成的Ba(Fe1/2Ta1/2)O3 (BFT)陶瓷结构和电学性能的影响。x射线衍射研究表明，所有样品的单位胞结构均为六边形(空间群:P3m1)。FTIR光谱也证实了BFT的形成没有任何新相。研磨(10 h)的BFT陶瓷显示出小晶粒尺寸(<2 μm)，这有利于高密度集成器件的介电应用。此外，研磨(10 h) BFT陶瓷样品的介电性能优于未研磨的样品(ε′值增强，tgδ值降低)。阻抗分析表明，电阻温度系数为负。建立了相关势垒跳跃模型(跳跃弛豫型)，成功地解释了当前陶瓷样品中电荷输运的机理。

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Effect of milling on the electrical properties of Ba(Fe1/2Ta1/2)O3 ceramic

In this work effect of high energy milling on the structural and electrical properties of Ba(Fe1/2Ta1/2)O3 (BFT) ceramic synthesized using standard solid-state reaction method were investigated. X-ray diffraction studies indicated that the unit cell structure for all the samples to be hexagonal (space group: P3m1). FTIR spectra also confirmed the formation of BFT without any new phase. The milled (10 h) BFT ceramic showed the formation of small grain sizes (<2 μm) which is beneficial for dielectric applications in high density integrated devices. Besides, the milled (10 h) BFT ceramic sample exhibited superior dielectric properties (enhancement in ε’-value and reduction in tgδ value) compared to un-milled one. Impedance analysis indicated the negative temperature coefficient of resistance (NTCR) character. The correlated barrier hopping model (jump relaxation type) is found to successfully explain the mechanism of charge transport in present ceramic samples.

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来源期刊

Advances in Materials Research-An International Journal MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

3.50

自引率

27.30%

发文量