GaSe薄膜的极化敏感反射和介电光谱

Q3 Engineering
H. Khanfar, A. Qasrawi
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引用次数: 1

摘要

研究了入射光波长200 ~ 1100nm范围内的光极化效应对GaSe薄膜的反射光谱和介电光谱的影响。在这个测量范围内,光的入射角在30°到80°之间变化。另外,在30°时,光偏振角()在0-90°范围内变化。不论的值如何,总的反射率都随着增大而急剧减小。另外,当固定在30°和不同的角度时,极化波的振幅比在与薄膜厚度一致的波长(800 nm)处呈现共振-反共振现象。这种特性归因于入射波和反射波之间的耦合干涉以及强吸收效应。在-极化和正入射光束下观察到两个主要的共振峰:一个在~540 (556 nm)处,另一个在~420太赫兹(714 nm)处。GaSe薄膜的介电常数表现出各向异性特性,使其成为多用途光电器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polarization Sensitive Reflection and Dielectric Spectra in GaSe Thin Films
The light polarization effects on the optical reflective and dielectric spectra of GaSe thin films are studied in the incident light wavelength range of 200–1100 nm. In this range of measurement, the angle of incidence () of light was varied between 30° and 80°. In addition, at of 30° the light polarizing angle () was altered in the range of 0–90°. Regardless of the value of , for all , the total reflectance sharply decreased with increasing . In addition, when is fixed at 30° and was varied, the amplitudes ratio of the polarized waves exhibits a resonance-antiresonance phenomenon at a wavelength that coincides with the film’s thickness (800 nm). This behavior was assigned to the coupled interference between incident and reflected waves and to the strong absorption effects. Two main resonance peaks are observed as response to -polarized and normal incident beam: one is at ~540 (556 nm) and the other at ~420 THz (714 nm). The dielectric constant of the GaSe films exhibits anisotropic characteristics that nominate it for use as multipurpose optoelectronic devices.
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来源期刊
Advances in Optoelectronics
Advances in Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
0
期刊介绍: Advances in OptoElectronics is a peer-reviewed, open access journal that publishes original research articles as well as review articles in all areas of optoelectronics.
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