背侧照明模式下光辅助电化学制备gan多孔结构的研究

ECS Electrochemistry Letters Pub Date : 2015-01-01 DOI:10.1149/2.0031505EEL

A. Watanabe, Y. Kumazaki, Zenji Yatabe, Taketomo Sato

{"title":"背侧照明模式下光辅助电化学制备gan多孔结构的研究","authors":"A. Watanabe, Y. Kumazaki, Zenji Yatabe, Taketomo Sato","doi":"10.1149/2.0031505EEL","DOIUrl":null,"url":null,"abstract":"We investigated the structural features of gallium-nitride-porous structures formed using the photo-assisted electrochemical process in the back-side illumination (BSI) mode. The pore diameter and depth were strongly affected by the direction of illumination, where higher controllability was achieved compared with front-side illumination. The spectroscopic measurements revealed that illumination with photon energy below the bulk bandgap plays an important role in pore formation. We propose a formation model by considering the Franz-Keldysh effect that can consistently explain the obtained experimental data in which anodic etching occurs only at the pore tips under the high electric field induced in the depletion region.","PeriodicalId":11470,"journal":{"name":"ECS Electrochemistry Letters","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/2.0031505EEL","citationCount":"8","resultStr":"{\"title\":\"Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode\",\"authors\":\"A. Watanabe, Y. Kumazaki, Zenji Yatabe, Taketomo Sato\",\"doi\":\"10.1149/2.0031505EEL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the structural features of gallium-nitride-porous structures formed using the photo-assisted electrochemical process in the back-side illumination (BSI) mode. The pore diameter and depth were strongly affected by the direction of illumination, where higher controllability was achieved compared with front-side illumination. The spectroscopic measurements revealed that illumination with photon energy below the bulk bandgap plays an important role in pore formation. We propose a formation model by considering the Franz-Keldysh effect that can consistently explain the obtained experimental data in which anodic etching occurs only at the pore tips under the high electric field induced in the depletion region.\",\"PeriodicalId\":11470,\"journal\":{\"name\":\"ECS Electrochemistry Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1149/2.0031505EEL\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Electrochemistry Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.0031505EEL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Electrochemistry Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0031505EEL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

研究了光辅助电化学过程在背侧照明(BSI)模式下形成的氮化镓多孔结构的结构特征。孔径和深度受光照方向的影响较大，与正面光照相比，光照方向的可控性更高。光谱测量结果表明，光子能量低于体带隙的照明在孔隙形成中起重要作用。我们提出了一个考虑Franz-Keldysh效应的地层模型，该模型可以一致地解释所获得的实验数据，其中阳极腐蚀仅发生在耗尽区诱导的高电场下的孔隙尖端。

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Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode

We investigated the structural features of gallium-nitride-porous structures formed using the photo-assisted electrochemical process in the back-side illumination (BSI) mode. The pore diameter and depth were strongly affected by the direction of illumination, where higher controllability was achieved compared with front-side illumination. The spectroscopic measurements revealed that illumination with photon energy below the bulk bandgap plays an important role in pore formation. We propose a formation model by considering the Franz-Keldysh effect that can consistently explain the obtained experimental data in which anodic etching occurs only at the pore tips under the high electric field induced in the depletion region.

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ECS Electrochemistry Letters ELECTROCHEMISTRY-MATERIALS SCIENCE, MULTIDISCIPLINARY

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