内光发射的物理学及其在低能极限下的红外应用

Q3 Engineering

Advances in Optoelectronics Pub Date : 2016-01-28 DOI:10.1155/2016/1832097

Y. Lao, A. Perera

{"title":"内光发射的物理学及其在低能极限下的红外应用","authors":"Y. Lao, A. Perera","doi":"10.1155/2016/1832097","DOIUrl":null,"url":null,"abstract":"Internal photoemission (IP) correlates with processes in which carriers are photoexcited and transferred from one material to another. This characteristic allows characterizing the properties of the heterostructure, for example, the band parameters of a material and the interface between two materials. IP also involves the generation and collection of photocarriers, which leads to applications in the photodetectors. This review discusses the generic IP processes based on heterojunction structures, characterizing -type band structure and the band offset at the heterointerface, and infrared photodetection including a novel concept of photoresponse extension based on an energy transfer mechanism between hot and cold carriers.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2016 1","pages":"1-18"},"PeriodicalIF":0.0000,"publicationDate":"2016-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/1832097","citationCount":"4","resultStr":"{\"title\":\"Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit\",\"authors\":\"Y. Lao, A. Perera\",\"doi\":\"10.1155/2016/1832097\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Internal photoemission (IP) correlates with processes in which carriers are photoexcited and transferred from one material to another. This characteristic allows characterizing the properties of the heterostructure, for example, the band parameters of a material and the interface between two materials. IP also involves the generation and collection of photocarriers, which leads to applications in the photodetectors. This review discusses the generic IP processes based on heterojunction structures, characterizing -type band structure and the band offset at the heterointerface, and infrared photodetection including a novel concept of photoresponse extension based on an energy transfer mechanism between hot and cold carriers.\",\"PeriodicalId\":7352,\"journal\":{\"name\":\"Advances in Optoelectronics\",\"volume\":\"2016 1\",\"pages\":\"1-18\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-01-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1155/2016/1832097\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2016/1832097\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2016/1832097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 4

摘要

内部光发射(IP)与载流子光激发并从一种材料转移到另一种材料的过程有关。该特性允许表征异质结构的特性，例如，材料的能带参数和两种材料之间的界面。IP还涉及光载流子的产生和收集，这导致在光电探测器中的应用。本文综述了基于异质结结构的红外探测过程、异质界面带型结构和带偏移的表征，以及基于热载流子和冷载流子之间的能量传递机制的光响应扩展的新概念。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit

Internal photoemission (IP) correlates with processes in which carriers are photoexcited and transferred from one material to another. This characteristic allows characterizing the properties of the heterostructure, for example, the band parameters of a material and the interface between two materials. IP also involves the generation and collection of photocarriers, which leads to applications in the photodetectors. This review discusses the generic IP processes based on heterojunction structures, characterizing -type band structure and the band offset at the heterointerface, and infrared photodetection including a novel concept of photoresponse extension based on an energy transfer mechanism between hot and cold carriers.

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来源期刊

Advances in Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

期刊介绍： Advances in OptoElectronics is a peer-reviewed, open access journal that publishes original research articles as well as review articles in all areas of optoelectronics.