{"title":"(100)Si/SiOx/HfO2/TiN体系中的电活性界面缺陷:起源、不稳定性和钝化","authors":"P. Hurley, K. Cherkaoui, A. Groenland","doi":"10.1149/1.2355702","DOIUrl":null,"url":null,"abstract":"An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600{degree sign}C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900{degree sign}C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550{degree sign}C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900{degree sign}C, 30s N2 RTA.","PeriodicalId":50319,"journal":{"name":"International Journal of Humanoid Robotics","volume":"1 1","pages":""},"PeriodicalIF":0.9000,"publicationDate":"2006-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/1.2355702","citationCount":"5","resultStr":"{\"title\":\"Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN System: Origin, Instabilities and Passivation\",\"authors\":\"P. Hurley, K. Cherkaoui, A. Groenland\",\"doi\":\"10.1149/1.2355702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600{degree sign}C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900{degree sign}C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550{degree sign}C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900{degree sign}C, 30s N2 RTA.\",\"PeriodicalId\":50319,\"journal\":{\"name\":\"International Journal of Humanoid Robotics\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2006-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1149/1.2355702\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Humanoid Robotics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1149/1.2355702\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ROBOTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Humanoid Robotics","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1149/1.2355702","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ROBOTICS","Score":null,"Total":0}
Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN System: Origin, Instabilities and Passivation
An analysis of the origin and passivation of interface states in (100)Si/SiOx/HfO2/TiN capacitor structures is presented. For high-k gate/metal gate capacitors which exhibit relatively high interface state densities (> 1x1011cm-2) the dominant interfacial defects are silicon dangling bond (Pbo) centres. For (100)Si/SiOx/HfO2/TiN capacitors which experience no high temperature thermal budget following HfO2/TiN gate formation (T<600{degree sign}C), the devices exhibit instabilities, where the interface state densities are modified during electrical measurements. The origin of this instability is studied. The response of the interface state density to rapid thermal annealing (30s) in N2 over the temperature range 600-900{degree sign}C is presented. In addition, results are presented for interface state passivation in forming gas (0.5H2/0.95N2) from 350-550{degree sign}C for (100)Si/SiOx/HfO2/TiN gate stacks with no post deposition annealing following TiN gate formation and for devices following a 900{degree sign}C, 30s N2 RTA.
期刊介绍:
The International Journal of Humanoid Robotics (IJHR) covers all subjects on the mind and body of humanoid robots. It is dedicated to advancing new theories, new techniques, and new implementations contributing to the successful achievement of future robots which not only imitate human beings, but also serve human beings. While IJHR encourages the contribution of original papers which are solidly grounded on proven theories or experimental procedures, the journal also encourages the contribution of innovative papers which venture into the new, frontier areas in robotics. Such papers need not necessarily demonstrate, in the early stages of research and development, the full potential of new findings on a physical or virtual robot.
IJHR welcomes original papers in the following categories:
Research papers, which disseminate scientific findings contributing to solving technical issues underlying the development of humanoid robots, or biologically-inspired robots, having multiple functionality related to either physical capabilities (i.e. motion) or mental capabilities (i.e. intelligence)
Review articles, which describe, in non-technical terms, the latest in basic theories, principles, and algorithmic solutions
Short articles (e.g. feature articles and dialogues), which discuss the latest significant achievements and the future trends in robotics R&D
Papers on curriculum development in humanoid robot education
Book reviews.