银-银系统无熔焊成功的银微观结构控制

Pin J. Wang, Chu-Hsuan Sha, Chin C. Lee
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引用次数: 20

摘要

利用银铟二元体系,成功地开发了硅(Si)芯片与铜(Cu)衬底之间的无熔合工艺。这是一种新的设计概念,利用Cu衬底上镀厚Ag来处理半导体之间热膨胀系数的大不匹配,例如Si (3 ppm/°C)和Cu (17 ppm/°C)。Ag层实际上成为Ag- cu衬底的一部分。由于银具有延展性、高导电性和高导热性等优越的物理性能,因此选择银作为包层材料。在厚Ag层之后镀5 μm In和0.1 μm Ag层。薄的外银层抑制了内银的氧化。经过多次实验,我们认识到接头的成功生产与银层的微观结构有关。晶粒小的Ag通过晶界扩散导致固体Ag2In金属间化合物的快速生长。因此,由于缺乏熔融相(L),无法获得连接。为了使Ag晶粒粗化,在镀银的Cu衬底上添加了退火步骤。这一步骤使银颗粒比镀银时粗200倍。粗化组织减缓了Ag2In的生长。因此,(L)相保持在熔融状态,有足够的时间与硅片上的银层反应产生接头。在镀银铜基板上产生了近乎完美的接头。所得接头由纯银、富银固溶体、Ag2In和Ag3In组成。熔化温度超过650℃。采用本工艺,可以在低键合温度(200℃)下,在Si芯片和Cu衬底之间制作高导热性的高温接头。我们预见银银系统将成为探索电子封装中各种无焊剂键合应用的重要系统。该系统提供了生产广泛成分选择和广泛熔化温度范围的接头的可能性。本文为银的微观结构如何影响键合结果提供了初步但有用的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silver Microstructure Control for Fluxless Bonding Success Using Ag-In System
A fluxless bonding process is successfully developed between silicon (Si) chips and copper (Cu) substrates using the silver-indium (Ag-In) binary system. This is a new design concept that utilizes thick Ag plated over the Cu substrate to deal with the large mismatch in coefficient of thermal expansion between semiconductors, such as Si (3 ppm/°C) and Cu (17 ppm/°C). The Ag layer actually becomes a part of the Ag-Cu substrate. Ag is chosen for the cladding because of its superior physical properties of ductility, high electrical conductivity, and high thermal conductivity. Following the thick Ag layer, 5 μm In and 0.1 μm Ag layers are plated. The thin outer Ag layer inhibits oxidation of inner In. After many bonding experiments, we realize that the success of producing a joint relates to the microstructure of the Ag layer. Ag with small grains results in rapid growth of solid Ag2In intermetallic compounds through grain boundary diffusion. Thus, a joint is not obtained because of lack of molten phase (L). To coarsen Ag grains, an annealing step is added to the Ag-plated Cu substrate. This step makes Ag grains 200 times coarser compared to the as-plated Ag. The coarsened microstructure slows down the Ag2In growth. Consequently, the (L) phase stays at the molten state with sufficient time to react with the Ag layer on the Si chip to produce a joint. Nearly perfect joints are produced on Ag-plated Cu substrates. The resulting joints consist of pure Ag, Ag-rich solid solution, Ag2In, and Ag3In. The melting temperature exceeds 650 °C. Using the present process, high temperature joints of high thermal conductivity are made between Si chips and Cu substrates at low bonding temperature (200°C). We foresee the Ag-In system as an important system to explore for various fluxless bonding applications in electronic packaging. This system provides the possibilities of producing joints of wide composition choices and wide melting temperature range. This paper provides preliminary but useful information on how the microstructure of Ag affects the bonding results.
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