系统封装用TSV三维硅模块的研制

N. Khan, V. S. Rao, S. Lim, H. We, V. Lee, Xiaowu Zhang, E. Liao, R. Nagarajan, T. Chai, V. Kripesh, J. Lau
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引用次数: 112

摘要

便携式电子产品需要包含数字、射频和存储功能的多功能模块。通过硅通孔(TSV)技术提供了一种手段,实现复杂,多功能集成与更高的封装密度的系统在封装。本文研制了一种具有TSV的三维硅模块。进行了热力学分析,优化了TSV互连设计。代表不同功能电路的多个芯片使用线键和倒装芯片互连方法组装。硅载体采用先过孔法制备,阻挡铜过孔采用后磨工艺暴露。本文研制了一种两层硅模块,并给出了模块的制作细节。在温度循环(-40/125°C)和跌落测试下评估了模块的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of 3-D Silicon Module With TSV for System in Packaging
Portable electronic products demand multifunctional module comprising of digital, radio frequency and memory functions. Through silicon via (TSV) technology provides a means of implementing complex, multifunctional integration with a higher packing density for a system in package. A 3-D silicon module with TSV has been developed in this paper. Thermo-mechanical analysis has been performed and TSV interconnect design is optimized. Multiple chips representing different functional circuits are assembled using wirebond and flip chip interconnection methods. Silicon carrier is fabricated using via-first approach, the barrier copper via is exposed by the backgrinding process. A two-stack silicon module is developed and module fabrication details are given in this paper. The module reliability has been evaluated under temperature cycling (-40/125°C ) and drop test.
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