{"title":"在300kV下通过透射电子显微镜对用于晶格成像的Si的可用样品厚度的实验评估。","authors":"Keita Kobayashi, Ryosuke Kizu","doi":"10.1016/j.ultramic.2023.113876","DOIUrl":null,"url":null,"abstract":"<div><p>We evaluated the usable specimen thickness of Si for lattice imaging on a transmission electron microscopy (TEM) instrument operating at 300 kV and equipped with a complementary metal-oxide-semiconductor camera by using an original reference material (RM) and comparing the lattice images obtained from Si patterns of the RM with various thicknesses. Lattice images of the {111} planes of crystalline Si are successfully observed for patterns with thicknesses of up to 508 nm. However, the contrast of these lattice fringes at a thickness of 508 nm is not distinct, even when recorded using a longer exposure time (5.0 s) than that required to obtain lattice images of patterns with thicknesses of 316 nm or less (0.5 s). Based on these results, we conclude that the practical thickness of crystalline Si specimens for accurate structural analysis and TEM magnification calibration via lattice imaging is less than approximately 500 nm under the experimental conditions.</p></div>","PeriodicalId":23439,"journal":{"name":"Ultramicroscopy","volume":null,"pages":null},"PeriodicalIF":2.1000,"publicationDate":"2023-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental evaluation of usable specimen thickness of Si for lattice imaging by transmission electron microscopy at 300 kV\",\"authors\":\"Keita Kobayashi, Ryosuke Kizu\",\"doi\":\"10.1016/j.ultramic.2023.113876\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We evaluated the usable specimen thickness of Si for lattice imaging on a transmission electron microscopy (TEM) instrument operating at 300 kV and equipped with a complementary metal-oxide-semiconductor camera by using an original reference material (RM) and comparing the lattice images obtained from Si patterns of the RM with various thicknesses. Lattice images of the {111} planes of crystalline Si are successfully observed for patterns with thicknesses of up to 508 nm. However, the contrast of these lattice fringes at a thickness of 508 nm is not distinct, even when recorded using a longer exposure time (5.0 s) than that required to obtain lattice images of patterns with thicknesses of 316 nm or less (0.5 s). Based on these results, we conclude that the practical thickness of crystalline Si specimens for accurate structural analysis and TEM magnification calibration via lattice imaging is less than approximately 500 nm under the experimental conditions.</p></div>\",\"PeriodicalId\":23439,\"journal\":{\"name\":\"Ultramicroscopy\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2023-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ultramicroscopy\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0304399123001936\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MICROSCOPY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ultramicroscopy","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0304399123001936","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MICROSCOPY","Score":null,"Total":0}
Experimental evaluation of usable specimen thickness of Si for lattice imaging by transmission electron microscopy at 300 kV
We evaluated the usable specimen thickness of Si for lattice imaging on a transmission electron microscopy (TEM) instrument operating at 300 kV and equipped with a complementary metal-oxide-semiconductor camera by using an original reference material (RM) and comparing the lattice images obtained from Si patterns of the RM with various thicknesses. Lattice images of the {111} planes of crystalline Si are successfully observed for patterns with thicknesses of up to 508 nm. However, the contrast of these lattice fringes at a thickness of 508 nm is not distinct, even when recorded using a longer exposure time (5.0 s) than that required to obtain lattice images of patterns with thicknesses of 316 nm or less (0.5 s). Based on these results, we conclude that the practical thickness of crystalline Si specimens for accurate structural analysis and TEM magnification calibration via lattice imaging is less than approximately 500 nm under the experimental conditions.
期刊介绍:
Ultramicroscopy is an established journal that provides a forum for the publication of original research papers, invited reviews and rapid communications. The scope of Ultramicroscopy is to describe advances in instrumentation, methods and theory related to all modes of microscopical imaging, diffraction and spectroscopy in the life and physical sciences.