Modeling low and high temperature controls in the growth of graphene-CNT hybrids by PECVD: an interplay between process and plasma parameters

The effect of process parameters such as the pressure, power, and substrate bias on the dimensions of CNT, graphene, and graphene-CNT hybrids in the low and high temperature regime is described by a multispecies plasma-assisted and catalyst-aided phenomenological growth model of graphene-carbon nanotube (CNT) hybrids. An interplay established in the present work between the process and plasma parameters (such as the electron density and temperature, and radical flux) characterizes the process parameters effects. It is found that this interplay is remarkably different at low and high temperature owing to the different processes that dominate during the growth in these temperature regimes.