弱三色场原子多光子电离中路径干涉的可控表面

T. Mercouris, C. Nicolaides
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引用次数: 3

摘要

由基频ω = 0.272 eV及其第二、三、四次高次谐波组成的弱三色交流场辐照H−1S基态时的多光子脱离率由第一原理计算得到。弱强度范围为107 ~ 108 W cm−2。计算系统地考虑了电子结构和电子相关效应。他们是通过实现一个时间无关的,非微扰的多电子,多光子理论(MEMPT)来完成的,该理论得到了周期平均的复特征值,其实部给出了场致能量位移,Δ,而虚部是多光子电离率,Γ。通过分析,合理的论证和计算,我们表明,当强度较弱时,Γ对相位差的依赖是简单的。具体来说,Γs以平面表面的形式描述,由于高阶电离路径,根据相位差的三角函数,具有较小的波纹。这种依赖关系也可能适用于其他原子系统,并提供了三色情况下弱场状态的定义。当场强度达到高阶电离路径变得重要时,这些依赖关系就会被打破,我们就会达到强场状态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Controllable surfaces of path interference in the multiphoton ionization of atoms by a weak trichromatic field
Multiphoton detachment rates for the H− 1S ground state irradiated by a weak trichromatic ac field consisting of the fundamental frequency ω = 0.272 eV and its second, third or fourth higher harmonics were computed from first principles. The weak intensities are in the range of 107–108 W cm−2. The calculations incorporated systematically electronic structure and electron correlation effects. They were done by implementing a time-independent, nonperturbative many-electron, many-photon theory (MEMPT) which obtains cycle-averaged complex eigenvalues, whose real part gives the field-induced energy shift, Δ, and the imaginary part is the multiphoton ionization rate, Γ. Through analysis, plausible arguments and computation, we show that when the intensities are weak the dependence of Γ on phase differences is simple. Specifically, Γs are depicted in the form of plane surfaces, with minor ripples due to higher order ionization paths, in terms of trigonometric functions of the phase differences. This dependence is likely to be applicable to other atomic systems as well, and to provide a definition of the weak field regime in the trichromatic case. When the field intensities are such that higher order ionization paths become important, these dependences break down and we reach the strong field regime.
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