具有前表面选择性带偏移势垒的硅互指背接触太阳能电池的电致发光分析

IF 1.9 Q3 PHYSICS, APPLIED
Koffi F. Ahanogbe, J. Alvarez, A. Jaffré, J. P. Connolly, M. Gueunier‐Farret, E. Fourmond, Seif El-Whibi, A. Fave, P. Carroy, Z. Djebbour, J. Kleider
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引用次数: 0

摘要

电致发光可以快速表征整个光伏太阳能电池,并在微米尺度上可视化缺陷。本文主要研究了以电致发光为特征的硅交叉指背接触电池的光电性能。空间分辨电致发光有助于控制三端串联钙钛矿硅基太阳能电池硅底亚电池中使用的交叉背接触结构的质量。通过电致发光作图分析了少数载流子扩散长度、表面复合速度以及电阻损耗和光学损耗的局部变化。此外,我们还利用电池的电致发光光谱量化了辐射饱和电流密度和辐射开路电压。这一步使我们能够准确地评估由于非辐射重组而在器件中引起的性能限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electroluminescence analysis of silicon interdigitated back contact solar cells with a front surface selective band offset barrier
Electroluminescence allows rapid characterization of an entire photovoltaic solar cell and visualization of defects at the micrometer scale. Here we focus on the optoelectronic properties of silicon interdigitated back contact cells characterized by electroluminescence. The spatially resolved electroluminescence helps us control the quality of interdigitated back contact structures used in silicon bottom subcells in a three-terminal tandem perovskite on silicon solar cell. Local variations in minority carrier diffusion length, surface recombination velocity and, the impact of resistive and optical losses were analyzed by electroluminescence mapping. In addition, we quantify the radiative saturation current density and the radiative open circuit voltage using the electroluminescence spectrum of the cell. This step allows us to accurately assess the performance limits induced in the device due to the non-radiative recombination.
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来源期刊
EPJ Photovoltaics
EPJ Photovoltaics PHYSICS, APPLIED-
CiteScore
2.30
自引率
4.00%
发文量
15
审稿时长
8 weeks
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