利用锁定热成像技术直接测量薄膜太阳能电池中反向偏压损伤引起的正反馈环路增益

IF 1.9 Q3 PHYSICS, APPLIED
Suheir Nofal, B. Pieters, M. Hülsbeck, C. Zahren, A. Gerber, U. Rau
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引用次数: 1

摘要

在这项工作中,我们提出了一种研究薄膜太阳能电池热失控效应的方法。太阳能电池的部分遮阳通常会导致遮阳电池的永久性损坏,并随着时间的推移降低太阳能组件的性能。在部分遮阳下,遮阳的电池可能会经历反向偏置结击穿。在像太阳能电池这样的大面积设备中,这种结击穿往往发生在非常局部的地方,从而导致非常局部的加热和所谓的“热点”。此前研究表明,Cu(in,Ga)Se2 (CIGS)薄膜太阳能电池存在正反馈效应,其高度局域化的功耗被放大,可能导致不稳定的热失控过程。此外,我们介绍了一种新的表征技术,激光诱导热点锁定热成像(HS-LIT),它可以可视化正反馈效应。在本文中,我们提出了一种改进的HS-LIT技术,使我们能够直接量化热点形成的环路增益。通过量化环路增益,我们可以直接测量局部热点的不稳定性,从而可以在各种条件下和各种细胞和细胞类型中对热点形成进行非破坏性研究。我们讨论了用于直接测量环路增益的改进HS-LIT设置。此外,我们通过测量CIGS太阳能电池中热失控效应的环路增益作为反向偏置电压的函数来证明新方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A direct measure of positive feedback loop-gain due to reverse bias damage in thin-film solar cells using lock-in thermography
In this work, we present a method to study thermal runaway effects in thin-film solar cells. Partial shading of solar cells often leads to permanent damage to shaded cells and degrades the performance of solar modules over time. Under partial shading, the shaded cells may experience a reverse bias junction breakdown. In large-area devices such as solar cells, this junction breakdown tends to take place very locally, thus leading to very local heating and so-called “hot-spots”. Previously, it was shown that a positive feedback effect exists in Cu(In,Ga)Se2 (CIGS) thin-film solar cells, where a highly localized power dissipation is amplified, which may lead to an unstable thermal runaway process. Furthermore, we introduced a novel characterization technique, laser induced Hot-Spot Lock-In Thermography (HS-LIT), which visualizes the positive feedback effect. In this paper, we present a modified HS-LIT technique that allows us to quantify directly a loop-gain for hot-spot formation. By quantifying the loop-gain we obtain a direct measure of how unstable a local hot-spot is, which allows the non-destructive study of hot-spot formation under various conditions and in various cells and cell types. We discuss the modified HS-LIT setup for the direct measurement of the loop-gain. Furthermore, we demonstrate the new method by measuring the loop-gain of the thermal runaway effect in a CIGS solar cell as a function of reverse bias voltage.
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来源期刊
EPJ Photovoltaics
EPJ Photovoltaics PHYSICS, APPLIED-
CiteScore
2.30
自引率
4.00%
发文量
15
审稿时长
8 weeks
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