交叉指状p+-(i)-n+背接触太阳能电池的后侧介电体-氢化与电荷效应

IF 1.9 Q3 PHYSICS, APPLIED
M. Rienäcker, Y. Larionova, J. Krügener, S. Wolter, R. Brendel, R. Peibst
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引用次数: 3

摘要

氧化物上多晶硅(POLO)钝化触点和交叉背触点(IBC)电池技术作为下一代太阳能电池的候选技术最近引起了人们的广泛关注。对于两个极性都具有POLO结的IBC电池(POLO2-IBC电池),必须电隔离电池背面高度缺陷的p+和n+多晶硅区域,以避免寄生重组。在p+和n+多晶硅区之间插入一个初始未掺杂的本态(i)区被证明可以成功地防止ISFH 26.1%效率的POLO2-IBC细胞过渡区的寄生重组。为了进一步将转换效率提高到27%,我们在p+-(i)-n+ POLO交叉点的背面采用供氢介质层堆叠,以提高POLO结的钝化质量。我们确实发现,在对称全面积均匀掺杂的参考样品上,POLO结有了显著的改善,但是当我们在p+-(i)-n+ POLO交叉的背面施加供氢层堆叠时,我们观察到POLO2-IBC电池的性能有了明显的下降。我们将此归因于由于供氢层堆栈的强负电荷密度,在p+和n+多晶硅区之间形成了导电通道。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects
Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities − a POLO2-IBC cell − has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.
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来源期刊
EPJ Photovoltaics
EPJ Photovoltaics PHYSICS, APPLIED-
CiteScore
2.30
自引率
4.00%
发文量
15
审稿时长
8 weeks
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