{"title":"纯和氧掺杂KCl单晶中32P的光退火和热退火反应","authors":"T. Andersen, J. Baptista","doi":"10.1039/TF9716701213","DOIUrl":null,"url":null,"abstract":"The behaviour of 32P-recoils during thermal and photo-annealing has been compared in pure and oxygen-doped KCl single crystals using reactor irradiation and ion implantation techniques to generate the radiophosphorus. The existence of a new type of 32P(I)-precursor is shown to be responsible for thermal annealing below 140° in oxygen doped crystals. The new 32P(I)-precursor is also present in pure KCl after F-centre bleaching. The radiolysis products of the oxygen dopant and of the host lattice are observed to determine the variations in the valence distribution of 32P.","PeriodicalId":23290,"journal":{"name":"Transactions of The Faraday Society","volume":"67 1","pages":"1213-1218"},"PeriodicalIF":0.0000,"publicationDate":"1971-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1039/TF9716701213","citationCount":"3","resultStr":"{\"title\":\"Photo- and thermal-annealing reactions of 32P in pure and oxygen-doped KCl single crystals\",\"authors\":\"T. Andersen, J. Baptista\",\"doi\":\"10.1039/TF9716701213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The behaviour of 32P-recoils during thermal and photo-annealing has been compared in pure and oxygen-doped KCl single crystals using reactor irradiation and ion implantation techniques to generate the radiophosphorus. The existence of a new type of 32P(I)-precursor is shown to be responsible for thermal annealing below 140° in oxygen doped crystals. The new 32P(I)-precursor is also present in pure KCl after F-centre bleaching. The radiolysis products of the oxygen dopant and of the host lattice are observed to determine the variations in the valence distribution of 32P.\",\"PeriodicalId\":23290,\"journal\":{\"name\":\"Transactions of The Faraday Society\",\"volume\":\"67 1\",\"pages\":\"1213-1218\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1971-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1039/TF9716701213\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions of The Faraday Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1039/TF9716701213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions of The Faraday Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1039/TF9716701213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photo- and thermal-annealing reactions of 32P in pure and oxygen-doped KCl single crystals
The behaviour of 32P-recoils during thermal and photo-annealing has been compared in pure and oxygen-doped KCl single crystals using reactor irradiation and ion implantation techniques to generate the radiophosphorus. The existence of a new type of 32P(I)-precursor is shown to be responsible for thermal annealing below 140° in oxygen doped crystals. The new 32P(I)-precursor is also present in pure KCl after F-centre bleaching. The radiolysis products of the oxygen dopant and of the host lattice are observed to determine the variations in the valence distribution of 32P.
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