ISO长波谱仪中掺杂锗光导体的标定与性能

S.E. Church , M.J. Griffin , P.A.R. Ade , M.C. Price , R.J. Emery , B.M. Swinyard
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引用次数: 4

摘要

红外空间天文台(ISO)的长波长光谱仪(LWS)使用10个掺杂锗光导体阵列,覆盖45 ~ 180 μm的波长范围。该阵列包括1个45 ~ 50 μm波长的Ge:Be探测器、5个50 ~ 110 μm波长的非应力Ge:Ga探测器和4个110 ~ 180 μm波长的应力Ge:Ga探测器。我们已经校准了探测器的性能,无论是单独的还是在LWS中。已经确定了使LWS灵敏度最大化的探测器偏置和工作温度的最佳值,从而使探测器的NEPs范围从Ge:Be的10−17 W Hz−12到Ge:Ga应力的5 × 10−19 W Hz−12。在LWS预期的低通量条件下(探测器处的<10−14 W),掺杂ge光导体表现出许多其他非线性和记忆效应。描述了这些影响的特征,并考虑了对LWS操作和校准的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Calibration and performance of doped-Ge photoconductors for the ISO Long Wavelength Spectrometer

The Long Wavelength Spectrometer (LWS), part of the Infrared Space Observatory (ISO), uses an array of 10 doped-germanium photoconductors to cover the wavelength range 45–180 μm. The array comprises one Ge:Be detector for the 45–50 μm range, five unstressed Ge:Ga detectors for wavelengths between 50 and 110 μm and four stressed Ge:Ga detectors for the long wavelength range 110–180 μm. We have calibrated the performance of the detectors, both individually and in the LWS. Optimum values of detector bias and operating temperature that maximize the sensitivity of the LWS have been established, resulting in detector NEPs ranging from 10−17 W Hz12 for Ge:Be to 5 × 10−19 W Hz12 for stressed Ge:Ga. Under the low flux conditions expected in the LWS (<10−14 W at the detector), doped-Ge photoconductors exhibit a number of other non-linearities and memory effects. The characteristics of these effects are described and the implications for operation and calibration of the LWS considered.

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