基于Pb1−xSnxTe(in) MBE薄膜光电探测器开关效应的工作机制

Infrared physics Pub Date : 1993-08-01 DOI:10.1016/0020-0891(93)90069-J

B.A. Akimov , L.I. Ryabova , V.N. Shumskiy , N.I. Petikov

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引用次数: 12

摘要

在BaF2衬底上制备了Pb1−xSnxTe(In) (x = 0.20) MBE薄膜。研究了脉冲电场和红外光照共同作用下的电阻率弛豫特性。我们已经证明，薄膜可以用作相当快速响应的光电探测器，在信号的周期性积累和猝灭状态下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An operating regime based on switching effects for photodetectors of Pb1−xSnxTe(in) MBE films

Pb_1−xSn_xTe(In) (x = 0.20) MBE films have been prepared on BaF₂ substrates. The characteristics of resistivity relaxation under the combined effect of a pulsed electric field and IR illumination have been investigated. We have shown that the films can be used as rather fast-response photodetectors operating in a regime of periodic accumulation and quenching of the signal.

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Infrared physics

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