{"title":"掺杂碲化铅缺陷水平的受激复合","authors":"S.D. Darchuk, F.F. Sizov, L.A. Korovina","doi":"10.1016/0020-0891(93)90125-Q","DOIUrl":null,"url":null,"abstract":"<div><p>The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at <em>T</em> = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level <em>E</em><sub>d</sub> ≈ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO<sub>2</sub>-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of <em>λ</em> ∼ 25 <em>μ</em>m at <em>T</em> = 77 K.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 6","pages":"Pages 655-659"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90125-Q","citationCount":"2","resultStr":"{\"title\":\"Stimulated recombination from the defect level in doped lead telluride\",\"authors\":\"S.D. Darchuk, F.F. Sizov, L.A. Korovina\",\"doi\":\"10.1016/0020-0891(93)90125-Q\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at <em>T</em> = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level <em>E</em><sub>d</sub> ≈ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO<sub>2</sub>-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of <em>λ</em> ∼ 25 <em>μ</em>m at <em>T</em> = 77 K.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"34 6\",\"pages\":\"Pages 655-659\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(93)90125-Q\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/002008919390125Q\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/002008919390125Q","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Stimulated recombination from the defect level in doped lead telluride
The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level Ed ≈ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ∼ 25 μm at T = 77 K.
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