{"title":"简并窄间隙半导体中俄歇1寿命测定的简单近似方法","authors":"Z. Djurić, Z. Jakšić, A. Vujanić, M. Smiljanić","doi":"10.1016/0020-0891(93)90118-Q","DOIUrl":null,"url":null,"abstract":"<div><p>Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (<em>E</em><sub><em>gA</em></sub>), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 6","pages":"Pages 601-605"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90118-Q","citationCount":"1","resultStr":"{\"title\":\"A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors\",\"authors\":\"Z. Djurić, Z. Jakšić, A. Vujanić, M. Smiljanić\",\"doi\":\"10.1016/0020-0891(93)90118-Q\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (<em>E</em><sub><em>gA</em></sub>), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"34 6\",\"pages\":\"Pages 601-605\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(93)90118-Q\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/002008919390118Q\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/002008919390118Q","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors
Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.
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