V.V. Tetyorkin, V.B. Alenberg, F.F. Sizov, S.N. Davidenko, V.Yu. Chopik
{"title":"PbSnTe/PbTeS异质二极管的界面态","authors":"V.V. Tetyorkin, V.B. Alenberg, F.F. Sizov, S.N. Davidenko, V.Yu. Chopik","doi":"10.1016/0020-0891(93)90116-O","DOIUrl":null,"url":null,"abstract":"<div><p>Lattice matched heterostructure diodes (HD) <em>p</em>-Pb<sub>0.8</sub>Sn<sub>0.2</sub>Te/<em>n</em>-PbTe<sub>0.97</sub>S<sub>0.03</sub> have been prepared by the vapour phase epitaxy (VPE) method. The diodes have a 50% spectral cutoff at λ ≅11.0 μm when operated at 82 K. Current-voltage (fI-U) and capacitance-voltage (<em>C</em>-<em>U</em>) characteristics were measured as a function of temperature. The <em>C</em>-<em>U</em> curves display peculiarities at forward bias which were explained by the existence of deep defect states localized at the interface. The best HD have <em>R</em><sub>0</sub><em>A</em> product values as high as 20 Ω cm<sup>2</sup> at 77 K.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 6","pages":"Pages 589-593"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90116-O","citationCount":"2","resultStr":"{\"title\":\"Interface states in PbSnTe/PbTeS heterodiodes\",\"authors\":\"V.V. Tetyorkin, V.B. Alenberg, F.F. Sizov, S.N. Davidenko, V.Yu. Chopik\",\"doi\":\"10.1016/0020-0891(93)90116-O\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Lattice matched heterostructure diodes (HD) <em>p</em>-Pb<sub>0.8</sub>Sn<sub>0.2</sub>Te/<em>n</em>-PbTe<sub>0.97</sub>S<sub>0.03</sub> have been prepared by the vapour phase epitaxy (VPE) method. The diodes have a 50% spectral cutoff at λ ≅11.0 μm when operated at 82 K. Current-voltage (fI-U) and capacitance-voltage (<em>C</em>-<em>U</em>) characteristics were measured as a function of temperature. The <em>C</em>-<em>U</em> curves display peculiarities at forward bias which were explained by the existence of deep defect states localized at the interface. The best HD have <em>R</em><sub>0</sub><em>A</em> product values as high as 20 Ω cm<sup>2</sup> at 77 K.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"34 6\",\"pages\":\"Pages 589-593\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(93)90116-O\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/002008919390116O\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/002008919390116O","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Lattice matched heterostructure diodes (HD) p-Pb0.8Sn0.2Te/n-PbTe0.97S0.03 have been prepared by the vapour phase epitaxy (VPE) method. The diodes have a 50% spectral cutoff at λ ≅11.0 μm when operated at 82 K. Current-voltage (fI-U) and capacitance-voltage (C-U) characteristics were measured as a function of temperature. The C-U curves display peculiarities at forward bias which were explained by the existence of deep defect states localized at the interface. The best HD have R0A product values as high as 20 Ω cm2 at 77 K.
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