长波长提取式光电二极管的数值分析

Józef Piotrowski, Alina Józwikowska, Krzysztof Józwikowski, Robert Ciupa
{"title":"长波长提取式光电二极管的数值分析","authors":"Józef Piotrowski,&nbsp;Alina Józwikowska,&nbsp;Krzysztof Józwikowski,&nbsp;Robert Ciupa","doi":"10.1016/0020-0891(93)90112-K","DOIUrl":null,"url":null,"abstract":"<div><p>The electrical and photoelectrical properties of the longwavelength <em>n</em><sup>+</sup><em>πp</em><sup>+</sup> Hg<sub>1−<em>x</em></sub>Cd<sub><em>x</em></sub>Te structures have been analyzed numerically. The band diagram, electrical field, photoelectrical gain, responsivity, noise and detectivity have been calculated as a function of voltage applied. The calculations have been performed for devices prepared from Hg<sub>1−<em>x</em></sub>Cd<sub><em>x</em></sub>Te, optimized for optimum performance at <em>λ</em> = 10.6 <em>μm</em>, and operated at a temperature of 230 K. Reverse bias results in suppression of Auger generation current in the lightly doped region of the junction. The main contribution to the total noise current comes mostly from the heavily doped <em>p</em><sup>+</sup> region and then from regions close to l-h junctions.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 6","pages":"Pages 565-572"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90112-K","citationCount":"19","resultStr":"{\"title\":\"Numerical analysis of longwavelength extracted photodiodes\",\"authors\":\"Józef Piotrowski,&nbsp;Alina Józwikowska,&nbsp;Krzysztof Józwikowski,&nbsp;Robert Ciupa\",\"doi\":\"10.1016/0020-0891(93)90112-K\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The electrical and photoelectrical properties of the longwavelength <em>n</em><sup>+</sup><em>πp</em><sup>+</sup> Hg<sub>1−<em>x</em></sub>Cd<sub><em>x</em></sub>Te structures have been analyzed numerically. The band diagram, electrical field, photoelectrical gain, responsivity, noise and detectivity have been calculated as a function of voltage applied. The calculations have been performed for devices prepared from Hg<sub>1−<em>x</em></sub>Cd<sub><em>x</em></sub>Te, optimized for optimum performance at <em>λ</em> = 10.6 <em>μm</em>, and operated at a temperature of 230 K. Reverse bias results in suppression of Auger generation current in the lightly doped region of the junction. The main contribution to the total noise current comes mostly from the heavily doped <em>p</em><sup>+</sup> region and then from regions close to l-h junctions.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"34 6\",\"pages\":\"Pages 565-572\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(93)90112-K\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/002008919390112K\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/002008919390112K","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

摘要

对n+πp+ Hg1−xCdxTe长波结构的电学和光电性质进行了数值分析。计算了带图、电场、光电增益、响应度、噪声和检出率随外加电压的变化。用Hg1−xCdxTe制备的器件进行了计算,在λ = 10.6 μm处优化了器件的最佳性能,工作温度为230 K。反向偏置导致在结的轻掺杂区域抑制俄歇产生电流。对总噪声电流的主要贡献主要来自重掺杂的p+区,其次是靠近l-h结的区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numerical analysis of longwavelength extracted photodiodes

The electrical and photoelectrical properties of the longwavelength n+πp+ Hg1−xCdxTe structures have been analyzed numerically. The band diagram, electrical field, photoelectrical gain, responsivity, noise and detectivity have been calculated as a function of voltage applied. The calculations have been performed for devices prepared from Hg1−xCdxTe, optimized for optimum performance at λ = 10.6 μm, and operated at a temperature of 230 K. Reverse bias results in suppression of Auger generation current in the lightly doped region of the junction. The main contribution to the total noise current comes mostly from the heavily doped p+ region and then from regions close to l-h junctions.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信