用于亚毫米波探测的全铌薄膜微桥型约瑟夫森结

Nobumitsu Hirose, Yuichi Harada, Matsuo Sekine, Shigeru Yoshimori , Mitsuo Kawamura
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引用次数: 0

摘要

提出了甲基丙烯酸甲酯(MMA)与3-三乙氧基甲基丙烯酸丙酯(ESPMA)共聚物作为一种新型正工作电子束(EB)抗蚀剂。发现它对CBrF3血浆损伤的抵抗力是聚甲基丙烯酸甲酯(PMMA)的4-10倍。揭示了反应刻蚀(RIE)中铌的刻蚀机理。采用新型EB抗蚀剂和纳米工艺技术,制备了全铌薄膜微桥。它显示了交流约瑟夫森效应,即在毫米波(70 GHz)辐射下观察到11阶的夏皮罗阶跃。此外,还明确地观察了这些薄膜微桥串联阵列的相干工作性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
All-Nb thin film microbridge-type Josephson junction for submillimeter-wave detection

A copolymer of methyl methacrylate (MMA) and 3-triethoxysilylpropyl methacrylate (ESPMA) was proposed as a positive-working electron beam (EB) resist of a new type. It was found that it had 4–10 times the resistance of polymethylmethacrylate (PMMA) against CBrF3 plasma damage. The mechanism of etching Nb in reactive-ion-etching (RIE) was deciphered. Using the new EB resist and nanometer process technology, an all-Nb thin film microbridge was fabricated. It shows the a.c. Josephson effect, i.e. the Shapiro steps upto the 11th were observed under millimeter-wave (70 GHz) radiation. In addition the coherently working performance of the series array of these thin-film microbridges were observed definitively.

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