红外探测器阵列用硅上窄隙薄膜和p-n结的生长

C. Boschetti, P.H.O. Rappl, A.Y. Ueta, I.N. Bandeira
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引用次数: 20

摘要

采用热壁外延法在硅衬底上生长碲化铅薄膜和p-n结,以II-a氟化物作为缓冲层,构建单片红外探测器阵列。在同一篇后记中还设置了肖特基障碍,以比较功绩的数字。p-n结具有与金属屏障相当的性能,并且除了预期的热和背景噪声源外,两种器件都有噪声源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays

Lead telluride epilayers and p-n junctions were grown on silicon substrates by hot wall epitaxy in order to construct monolithic infrared (IR) detectors arrays, using II-a fluorides as buffer layers. Schottky barriers were also made in the same epilayers to compare the figures of merit. The p-n junctions had performances comparable with the metal barriers and both devices had noise sources in addition to the expected thermal and background ones.

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