C. Boschetti, P.H.O. Rappl, A.Y. Ueta, I.N. Bandeira
{"title":"红外探测器阵列用硅上窄隙薄膜和p-n结的生长","authors":"C. Boschetti, P.H.O. Rappl, A.Y. Ueta, I.N. Bandeira","doi":"10.1016/0020-0891(93)90015-Y","DOIUrl":null,"url":null,"abstract":"<div><p>Lead telluride epilayers and <em>p-n</em> junctions were grown on silicon substrates by hot wall epitaxy in order to construct monolithic infrared (IR) detectors arrays, using II-a fluorides as buffer layers. Schottky barriers were also made in the same epilayers to compare the figures of merit. The <em>p-n</em> junctions had performances comparable with the metal barriers and both devices had noise sources in addition to the expected thermal and background ones.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 3","pages":"Pages 281-287"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90015-Y","citationCount":"20","resultStr":"{\"title\":\"Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays\",\"authors\":\"C. Boschetti, P.H.O. Rappl, A.Y. Ueta, I.N. Bandeira\",\"doi\":\"10.1016/0020-0891(93)90015-Y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Lead telluride epilayers and <em>p-n</em> junctions were grown on silicon substrates by hot wall epitaxy in order to construct monolithic infrared (IR) detectors arrays, using II-a fluorides as buffer layers. Schottky barriers were also made in the same epilayers to compare the figures of merit. The <em>p-n</em> junctions had performances comparable with the metal barriers and both devices had noise sources in addition to the expected thermal and background ones.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"34 3\",\"pages\":\"Pages 281-287\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(93)90015-Y\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/002008919390015Y\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/002008919390015Y","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays
Lead telluride epilayers and p-n junctions were grown on silicon substrates by hot wall epitaxy in order to construct monolithic infrared (IR) detectors arrays, using II-a fluorides as buffer layers. Schottky barriers were also made in the same epilayers to compare the figures of merit. The p-n junctions had performances comparable with the metal barriers and both devices had noise sources in addition to the expected thermal and background ones.