Tunable InSb detectors under uniaxial and hydrostatic pressure

We report on n-InSb photoconductive detectors, which are either mounted on different substrates (metals and synthetic materials) or embedded in a special glue. If these detectors are cooled to 4.2 K, the different coefficients of expansion provide either a uniaxial or a hydrostatic pressure. This pressure causes a shift of the resonances (for the mounted detectors up to 5.5%, for the embedded detector 5.8% at 2.3 T) and a freeze out of electrons, which results in a decrease of the cyclotron resonance (CR) signal in comparison to the impurity cyclotron resonance (ICR) signal for the embedded detector.