{"title":"双涂层硅结构的无损表征","authors":"J.A.A. Engelbrecht , M. Walden, A. Dupnock","doi":"10.1016/0020-0891(93)90018-3","DOIUrl":null,"url":null,"abstract":"<div><p>Dual epilayer structures consisting of <span><math><mtext>p−</mtext><mtext>p+</mtext></math></span> on p− silicon substrates were characterized using non-destructive Fourier transform infrared reflectance spectroscopy and sheet resistance measurements. The thickness of each layer, as well as the dopant concentration of the layers were determined. Results were compared to data obtained by spreading resistance profiling.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 3","pages":"Pages 303-309"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90018-3","citationCount":"0","resultStr":"{\"title\":\"Non-destructive characterization of dual epilayer silicon structures\",\"authors\":\"J.A.A. Engelbrecht , M. Walden, A. Dupnock\",\"doi\":\"10.1016/0020-0891(93)90018-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Dual epilayer structures consisting of <span><math><mtext>p−</mtext><mtext>p+</mtext></math></span> on p− silicon substrates were characterized using non-destructive Fourier transform infrared reflectance spectroscopy and sheet resistance measurements. The thickness of each layer, as well as the dopant concentration of the layers were determined. Results were compared to data obtained by spreading resistance profiling.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"34 3\",\"pages\":\"Pages 303-309\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(93)90018-3\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0020089193900183\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0020089193900183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non-destructive characterization of dual epilayer silicon structures
Dual epilayer structures consisting of on p− silicon substrates were characterized using non-destructive Fourier transform infrared reflectance spectroscopy and sheet resistance measurements. The thickness of each layer, as well as the dopant concentration of the layers were determined. Results were compared to data obtained by spreading resistance profiling.
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