S. Marchetti, M. Giorgi , C. Lazzari, V. Palleschi, R. Simili
{"title":"利用各向异性PbS和PbSe薄膜的横向dember效应在近红外和中红外快速检测","authors":"S. Marchetti, M. Giorgi , C. Lazzari, V. Palleschi, R. Simili","doi":"10.1016/0020-0891(93)90002-O","DOIUrl":null,"url":null,"abstract":"<div><p>The transverse Dember effect in semiconductor anisotropic films (PbS, PbSe) can be used for detection of ns infrared (IR) pulses in the 1–4 μm region with a typical 0.1 <span><math><mtext>V</mtext><mtext>MW</mtext></math></span> responsivity for detectors of 1 cm<sup>2</sup> area.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 2","pages":"Pages 137-141"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90002-O","citationCount":"5","resultStr":"{\"title\":\"Fast detection in the near and medium infrared by means of transverse dember effect in anisotropic PbS and PbSe films\",\"authors\":\"S. Marchetti, M. Giorgi , C. Lazzari, V. Palleschi, R. Simili\",\"doi\":\"10.1016/0020-0891(93)90002-O\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The transverse Dember effect in semiconductor anisotropic films (PbS, PbSe) can be used for detection of ns infrared (IR) pulses in the 1–4 μm region with a typical 0.1 <span><math><mtext>V</mtext><mtext>MW</mtext></math></span> responsivity for detectors of 1 cm<sup>2</sup> area.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"34 2\",\"pages\":\"Pages 137-141\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(93)90002-O\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/002008919390002O\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/002008919390002O","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fast detection in the near and medium infrared by means of transverse dember effect in anisotropic PbS and PbSe films
The transverse Dember effect in semiconductor anisotropic films (PbS, PbSe) can be used for detection of ns infrared (IR) pulses in the 1–4 μm region with a typical 0.1 responsivity for detectors of 1 cm2 area.