{"title":"HgCdTe光电二极管-器件研究","authors":"Fei-Ming Tong , Yuan Haoxin , Yang Xiuzhen , N.M. Ravindra","doi":"10.1016/0020-0891(92)90067-4","DOIUrl":null,"url":null,"abstract":"<div><p>Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"33 6","pages":"Pages 511-522"},"PeriodicalIF":0.0000,"publicationDate":"1992-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(92)90067-4","citationCount":"2","resultStr":"{\"title\":\"HgCdTe photodiodes—A device study\",\"authors\":\"Fei-Ming Tong , Yuan Haoxin , Yang Xiuzhen , N.M. Ravindra\",\"doi\":\"10.1016/0020-0891(92)90067-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.</p></div>\",\"PeriodicalId\":81524,\"journal\":{\"name\":\"Infrared physics\",\"volume\":\"33 6\",\"pages\":\"Pages 511-522\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0020-0891(92)90067-4\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0020089192900674\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0020089192900674","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.
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