使用聚偏氟乙烯三氟乙烯栅极绝缘体和氧化物半导体有源通道的非易失性铁电存储器薄膜晶体管

4区物理与天体物理 Q4 Physics and Astronomy

Topics in Applied Physics Pub Date : 2020-01-01 DOI:10.1007/978-94-024-0841-6_10

Sung‐Min Yoon

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel

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来源期刊

Topics in Applied Physics 物理-物理：应用

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Topics in Applied Physics is a well-established series of review books, each of which presents a comprehensive survey of a selected topic within the area of applied physics. Edited and written by leading research scientists in the field concerned, each volume contains review contributions covering the various aspects of the topic. Together these provide an overview of the state of the art in the respective field, extending from an introduction to the subject right up to the frontiers of contemporary research. Topics in Applied Physics is addressed to all scientists at universities and in industry who wish to obtain an overview and to keep abreast of advances in applied physics. The series also provides easy but comprehensive access to the fields for newcomers starting research. Contributions are specially commissioned. The Managing Editors are open to any suggestions for topics coming from the community of applied physicists no matter what the field and encourage prospective book editors to approach them with ideas.