{"title":"可见光通信用单量子阱InGaN红色微led的高性能研究","authors":"Fu-He Hsiao, Tzu-Yi Lee, Wen-Chien Miao, Yi-Hua Pai, Daisuke Iida, Chun-Liang Lin, Fang-Chung Chen, Chi-Wai Chow, Chien-Chung Lin, Ray-Hua Horng, Jr-Hau He, Kazuhiro Ohkawa, Yu-Heng Hong, Chiao-Yun Chang, Hao-Chung Kuo","doi":"10.1186/s11671-023-03871-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm<sup>2</sup>. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.</p></div>","PeriodicalId":715,"journal":{"name":"Nanoscale Research Letters","volume":"18 1","pages":""},"PeriodicalIF":4.7030,"publicationDate":"2023-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1186/s11671-023-03871-z.pdf","citationCount":"0","resultStr":"{\"title\":\"Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications\",\"authors\":\"Fu-He Hsiao, Tzu-Yi Lee, Wen-Chien Miao, Yi-Hua Pai, Daisuke Iida, Chun-Liang Lin, Fang-Chung Chen, Chi-Wai Chow, Chien-Chung Lin, Ray-Hua Horng, Jr-Hau He, Kazuhiro Ohkawa, Yu-Heng Hong, Chiao-Yun Chang, Hao-Chung Kuo\",\"doi\":\"10.1186/s11671-023-03871-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm<sup>2</sup>. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.</p></div>\",\"PeriodicalId\":715,\"journal\":{\"name\":\"Nanoscale Research Letters\",\"volume\":\"18 1\",\"pages\":\"\"},\"PeriodicalIF\":4.7030,\"publicationDate\":\"2023-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1186/s11671-023-03871-z.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanoscale Research Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1186/s11671-023-03871-z\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale Research Letters","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1186/s11671-023-03871-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在这项研究中，我们展示了具有单量子阱(SQW)结构的基于ingan的红色微型led在可见光通信应用中的潜力。我们的研究结果表明，与具有双量子阱(DQWs)结构的InGaN红色微型led相比，SQW样品具有更好的晶体质量，高纯度发射，半最大全宽度更窄，内部量子效率更高。与dqw器件相比，具有SQW结构的InGaN红色微型led具有更高的最大外量子效率(5.95%)，并且随着电流密度的增加，蓝移较少。此外，在注入电流密度为2000 a /cm2时，SQW器件具有424 MHz的优越调制带宽和800 Mbit/s的数据传输速率。这些结果表明，基于ingan的SQW红色微led在实现全彩微显示和可见光通信应用方面具有很大的前景。
Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications
In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.
期刊介绍：
Nanoscale Research Letters (NRL) provides an interdisciplinary forum for communication of scientific and technological advances in the creation and use of objects at the nanometer scale. NRL is the first nanotechnology journal from a major publisher to be published with Open Access.
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