用于过氧化氢传感的ISFET的制备与表征

Q4 Engineering
P. H. Duarte, Ricardo Cardoso Rangel, D. A. Ramos, Leonardo Shimizu Yojo, Carlos Augusto Bergfeld Mori, K. Sasaki, Paula Ghedini Der Agopian, J. Martino
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引用次数: 1

摘要

这项工作介绍了离子敏感场效应晶体管(ISFET)的制造和过氧化氢传感的电学特性。设置了两种配置来评估设备对溶液浓度的敏感性。首先,在样品溶液(包含在栅极区域上方)中使用一个电极进行测量,但由于二次效应的普遍性,结果可能与溶液的特性没有直接关系。第二种方法在样品溶液中使用两个电极,与使用一个电极的测量相比,在最小的间隔内,在过氧化氢浓度增加时显示出更高的灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ISFET Fabrication and Characterization for Hydrogen Peroxide sensing
This work presents the Ion-Sensitive Field Effect Transistor (ISFET) fabrication and electrical characterization for hydrogen peroxide sensing. Two configurations were set up to evaluate the devices sensitivity to the concentration of the solution. First, measurements with one electrode in the sample solution (contained over the gate area) were performed, but the results may not be directly related to the characteristics of the solution, due to the prevalence of secondary effects. The second method, using two electrodes in the sample solution, shows a higher sensitivity at increasing hydrogen peroxide concentrations, in smallest intervals when compared to measurements with one electrode.
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来源期刊
Journal of Integrated Circuits and Systems
Journal of Integrated Circuits and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.90
自引率
0.00%
发文量
39
期刊介绍: This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.
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