锗三栅FinFET源极栅极扩展的电学参数分析

Q4 Engineering

International Journal of Nanoparticles Pub Date : 2019-03-29 DOI:10.1504/IJNP.2019.10020328

R. Das, S. Baishya

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引用次数: 0

摘要

本文介绍了沟道区浓度、温度变化、漏极电势、栅极功函数和静电电势等几何和电学参数对源极上重叠两层栅极电介质的锗（Ge）FinFET电学特性的影响。与传统的FinFET结构相比，所提出的器件在ION、IOFF和ION/IOFF方面表现出更好的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical parameter analysis of gate-extension on source of germanium tri-gate FinFET

This paper presents the impact of geometrical and the electrical parameters such as the concentration in channel region, variation of temperature, drain potential, gate work function, and electrostatic potential on the electrical characteristics of germanium (Ge) FinFET with two stacked gate dielectrics overlap on the source. The presented device exhibits better performance in terms of ION, IOFF, and ION/IOFF compared to the conventional FinFET structure.

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来源期刊

International Journal of Nanoparticles Engineering-Mechanical Engineering

CiteScore

1.60

自引率

0.00%

发文量