量子约束能对磷化铟（InP）和砷化铟（InAs）能隙和活化能影响的研究

IF 1 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Digest Journal of Nanomaterials and Biostructures Pub Date : 2023-07-02 DOI:10.15251/djnb.2023.182.703

A. H. Asal, S. N. T. Al-Rashid

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引用次数: 0

摘要

这项研究考察了量子约束能量如何影响由能隙表示的电学特性。并使用基于特征矩阵理论和Bruce模型的计算机程序（MATLAB）版本（R2012a）研究了砷化铟（InAs）和磷化铟（Inp）的活化能，我们发现在小纳米尺度上，能隙随着量子约束能的增加而增加，以及由于量子约束效应引起的活化能，但在大纳米尺度上，这些电学性质随着量子约束能量的增加而降低。

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Study of the impact of quantum confinement energy on the energy gap and activation energy of indium phosphide (InP) and indium arsenide (InAs)

This study examines how quantum confinement energy affects the electrical characteristics represented by the energy gap. and the activation energy of indium arsenide (InAs) and indium phosphide (Inp) was studied using a computer program (MATLAB) version (R2012a), which is based on the characteristic matrix theory and Bruce's model, we found that the energy gap increases with the quantum confinement energy at small nanoscales, as well as the activation energy due to the quantum confinement effect, but these electrical properties decrease with the quantum confinement energy at large nanoscales.

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