Emil Z. Ulsig, I. Degli-Eredi, E. Stanton, N. Volet
{"title":"AlGaAs绝缘体上波导的高效低阈值频率转换","authors":"Emil Z. Ulsig, I. Degli-Eredi, E. Stanton, N. Volet","doi":"10.3389/fphot.2022.904651","DOIUrl":null,"url":null,"abstract":"A design study is presented for an efficient, compact and robust device to convert the frequency of single-photons from the near-infrared to the telecom C-band. The material platform aluminum gallium arsenide (AlGaAs)-on-insulator, with its relatively large second-order nonlinearity, is used to create highly confined optical modes. This platform can feasibly incorporate single-photon emitters such as indium arsenide (InAs) on gallium arsenide (GaAs), paving the way towards direct integration of single-photon sources and nonlinear waveguides on the same chip. In this design study, single-pass difference-frequency generation (DFG) producing C-band single-photons is enabled via form birefringent phase-matching between a 930 nm single-photon pump and continuous wave (CW) idler at 2,325 nm. In particular the idler and single-photons are combined with an on-chip directional coupler, and then tapered to a single waveguide where the three modes are phase-matched. The design is studied at a special case, showing high fabrication tolerances, and an internal conversion efficiency up to 41%.","PeriodicalId":73099,"journal":{"name":"Frontiers in photonics","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Efficient Low Threshold Frequency Conversion in AlGaAs-On-Insulator Waveguides\",\"authors\":\"Emil Z. Ulsig, I. Degli-Eredi, E. Stanton, N. Volet\",\"doi\":\"10.3389/fphot.2022.904651\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A design study is presented for an efficient, compact and robust device to convert the frequency of single-photons from the near-infrared to the telecom C-band. The material platform aluminum gallium arsenide (AlGaAs)-on-insulator, with its relatively large second-order nonlinearity, is used to create highly confined optical modes. This platform can feasibly incorporate single-photon emitters such as indium arsenide (InAs) on gallium arsenide (GaAs), paving the way towards direct integration of single-photon sources and nonlinear waveguides on the same chip. In this design study, single-pass difference-frequency generation (DFG) producing C-band single-photons is enabled via form birefringent phase-matching between a 930 nm single-photon pump and continuous wave (CW) idler at 2,325 nm. In particular the idler and single-photons are combined with an on-chip directional coupler, and then tapered to a single waveguide where the three modes are phase-matched. The design is studied at a special case, showing high fabrication tolerances, and an internal conversion efficiency up to 41%.\",\"PeriodicalId\":73099,\"journal\":{\"name\":\"Frontiers in photonics\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Frontiers in photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3389/fphot.2022.904651\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers in photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3389/fphot.2022.904651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Efficient Low Threshold Frequency Conversion in AlGaAs-On-Insulator Waveguides
A design study is presented for an efficient, compact and robust device to convert the frequency of single-photons from the near-infrared to the telecom C-band. The material platform aluminum gallium arsenide (AlGaAs)-on-insulator, with its relatively large second-order nonlinearity, is used to create highly confined optical modes. This platform can feasibly incorporate single-photon emitters such as indium arsenide (InAs) on gallium arsenide (GaAs), paving the way towards direct integration of single-photon sources and nonlinear waveguides on the same chip. In this design study, single-pass difference-frequency generation (DFG) producing C-band single-photons is enabled via form birefringent phase-matching between a 930 nm single-photon pump and continuous wave (CW) idler at 2,325 nm. In particular the idler and single-photons are combined with an on-chip directional coupler, and then tapered to a single waveguide where the three modes are phase-matched. The design is studied at a special case, showing high fabrication tolerances, and an internal conversion efficiency up to 41%.