一种用于低功耗延迟产品的高效并行比较器结构设计

IF 0.5 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
M. Gupta, R. Chauhan
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引用次数: 0

摘要

本文提出了一种用于静态逻辑的二进制比较器架构,以实现低功耗和高性能操作。它还介绍了各种最先进的比较器设计的详细时序性能和功率分析。这种设计的主要优点是其在宽操作数大小范围内保持的高速度和功率效率,这在低输入数据活动环境下是有用的。所提出的电路设计使用最小扇入和扇出逻辑门来实现高速和低功耗。利用具有最小扇入和扇出逻辑门(NAND-NOR)的2位二进制比较器电路,通过使用低基数多路复用器和优先级编码器,提出了用于较高输入操作数的并行二进制比较器的结构。此外,为了将多路复用器和优先级编码器的大小减小两倍,还提出了一种使用4位二进制比较器来降低其复杂性的通用架构。所提出的电路在功耗和延迟方面进行了优化,这是由于低负载电容、低泄漏和降低了动态功耗。所提出的每个电路在速度、功耗、功率延迟乘积(PDP)方面都有自己的优点。它的合成是在180纳米和90纳米CMOS技术上使用Cadence工具完成的。还获得了使用90nm CMOS工艺(GPDK工艺)的所提出的架构的物理布局。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of an Efficient Parallel Comparator Architecture for Low Power Delay Product
A binary comparator architecture is proposed in this work for static logic to achieve both low-power and high-performance operations. It also presents a detailed timing performance and power analysis of various state-of-the-art comparator designs. The main advantages of this design are its high speed and power efficiency maintained over a wide range of operands size, which is useful at low-input data activity environments. The proposed circuit design uses minimum fan-in and fan-out logic gates for achieving high speed and low power dissipation. Utilizing a 2-bit binary comparator circuit with minimum fan-in and fan-out of logic gates (NAND-NOR), the architecture of a parallel binary comparator is proposed for higher input operands by using a low radix multiplexer and priority encoder. Further, to decrease the size of the multiplexer and priority encoder by two times, a general architecture is also proposed by using a 4-bit binary comparator to reduce its complexity. The proposed circuits are optimized in terms of the power consumption and delay, which are due to low load capacitance, low leakages, and reduced dynamic power dissipation. Each of the proposed circuits has its own merits in terms of speed, power consumption, Power-Delay Product (PDP). Its synthesis is done on 180 nm as well as 90 nm CMOS technology using the Cadence tool. The physical layout of the proposed architecture using a 90 nm CMOS process (GPDK process) is also obtained.
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来源期刊
Advances in Electrical and Electronic Engineering
Advances in Electrical and Electronic Engineering ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
33.30%
发文量
30
审稿时长
25 weeks
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